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Jang, Jun Tae
15234  Ergebnisse:
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1

Short- and Long-Term Memory Based on a Floating-Gate IGZO S..:

Kang, Dongyeon ; Kim, Wonjung ; Jang, Jun Tae...
IEEE Access.  11 (2023)  - p. 20196-20201 , 2023
Link: https://doi.org/10.1109/..
 
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2

Read Disturbance in Cross-Point Phase-Change Memory Arrays—..:

Kim, Donguk ; Jang, Jun Tae ; Kim, Changwook...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 521-526 , 2023
Link: https://doi.org/10.1109/..
 
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3

Read Disturbances in Cross-Point Phase-Change Memory Arrays..:

Kim, Donguk ; Jang, Jun Tae ; Kim, Changwook...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 514-520 , 2023
Link: https://doi.org/10.1109/..
 
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4

Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Ins..:

Park, Shinyoung ; Youn, Sangwook ; Jang, Jun Tae..
Crystals.  12 (2022)  5 - p. 594 , 2022
Link: https://doi.org/10.3390/..
 
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5

Device modeling of two-steps oxygen anneal-based submicron ..:

Kim, Donguk ; Kim, Je-Hyuk ; Choi, Woo Sik...
Scientific Reports.  12 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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6

Influence of Al2O3 layer on InGaZnO memristor crossbar arra..:

Choi, Woo Sik ; Jang, Jun Tae ; Kim, Donguk...
Chaos, Solitons & Fractals.  156 (2022)  - p. 111813 , 2022
Link: https://doi.org/10.1016/..
 
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7

Cation Composition-Dependent Device Performance and Positiv..:

Jang, Jun Tae ; Kim, Donguk ; Baeck, Ju Heyuck...
ACS Applied Materials & Interfaces.  14 (2022)  1 - p. 1389-1396 , 2022
Link: https://doi.org/10.1021/..
 
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8

Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic ..:

Kang, Dongyeon ; Jang, Jun Tae ; Park, Shinyoung...
IEEE Access.  9 (2021)  - p. 59345-59352 , 2021
Link: https://doi.org/10.1109/..
 
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9

Reliability-Aware SPICE Compatible Compact Modeling of IGZO..:

Kim, Je-Hyuk ; Seo, Youngjin ; Jang, Jun Tae...
Applied Sciences.  11 (2021)  11 - p. 4838 , 2021
Link: https://doi.org/10.3390/..
 
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10

Effect of the Gate Dielectric Layer of Flexible InGaZnO Syn..:

Park, Shinyoung ; Jang, Jun Tae ; Hwang, Yeongjin...
ACS Applied Electronic Materials.  3 (2021)  9 - p. 3972-3979 , 2021
Link: https://doi.org/10.1021/..
 
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11

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen..:

Kim, Je-Hyuk ; Jang, Jun Tae ; Bae, Jong-Ho...
Micromachines.  12 (2021)  3 - p. 327 , 2021
Link: https://doi.org/10.3390/..
 
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12

A highly reliable physics-based SPICE compact model of IGZO..:

Jang, Jun Tae ; Min, Jungi ; Kim, Donguk...
Solid-State Electronics.  166 (2020)  - p. 107764 , 2020
Link: https://doi.org/10.1016/..
 
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13

One Transistor–Two Memristor Based on Amorphous Indium–Gall..:

Jang, Jun Tae ; Kim, Donguk ; Choi, Woo Sik...
ACS Applied Electronic Materials.  2 (2020)  9 - p. 2837-2844 , 2020
Link: https://doi.org/10.1021/..
 
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14

Digital and Analog Switching Characteristics of InGaZnO Mem..:

Jang, Jun Tae ; Min, Jungi ; Hwang, Yeongjin...
IEEE Access.  8 (2020)  - p. 192304-192311 , 2020
Link: https://doi.org/10.1109/..
 
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15

LRS retention fail based on joule heating effect in InGaZnO..:

Jang, Jun Tae ; Ahn, Geumho ; Choi, Sung-Jin...
Applied Physics Express.  13 (2020)  5 - p. 054004 , 2020
Link: https://doi.org/10.35848..
 
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