Jeon, Woochul
48  Ergebnisse:
Personensuche X
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2

A Pathway to Improve the Reliability of p-GaN Gate HEMTs th..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hwang, Injun ; Jeon, Woochul ; Hwang, Sun-Kyu... - p. 61-64 , 2022
 
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8

(Invited) intrinsic reliability assessment of 650V rated Al..:

Moens, Peter ; Banerjee, Abhishek ; Constant, Aurore...
Moens , P , Banerjee , A , Constant , A , Coppens , P , Caesar , M , Li , Z , Vanderweghe , S , Declercq , F , Padmanabhan , B , Jeon , W , Guo , J , Salih , A , Tack , M , Meneghini , M , Dalcanale , S , Tajilli , A , Meneghesso , G , Zanoni , E , Uren , M , Chatterjee , I , Karboyan , S & Kuball , M 2016 , (Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : an industry perspective . in F Roozeboom , V Narayanan , K Kakushima , P J Timans , E P Gusev , Z Karim & S De Gendt (eds) , 229th ECS Meeting May 29, 2016 - June 2, 2016 San Diego, CA : Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 . ECS Transactions , no. 4 , vol. 72 , The Electrochemical Society, Inc , pp. 65-76 . https://doi.org/10.1149/07204.0065ecst.  , 2016
 
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15

Enhanced catalytic activity and stability of SOFC electrode..:

Shin, Hyunduck ; Seo, Jongsu ; Jeon, SungHyun...
Journal of Materials Chemistry A.  12 (2024)  18 - p. 10695-10703 , 2024
 
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