E-LIB Suche - Ergebnisse für: Jiro Yugami, Jiro Yugami

1

The Increase of the Native Oxide Thickness on H-Terminated ..:

Itoga, Toshihiko ; Kojima, Hisao ; Jiro Yugami, Jiro Yugami.
Japanese Journal of Applied Physics. 36 (1997) 3S - p. 1578 , 1997

Link: https://doi.org/10.1143/..

2

(Invited) Negatively Charged Defects Generated by Rare-Eart..:

Sato, Motoyuki ; Kamiyama, Satoshi ; Sugita, Yoshihiro...
ECS Transactions. 28 (2010) 2 - p. 237-250 , 2010

Link: https://doi.org/10.1149/..

3

Transformation of Crystalline Structure of HfO2 by La- or Y..:

Suzuki, Takayuki ; Matsuki, Takeo ; Morooka, Tetsu...
ECS Transactions. 28 (2010) 1 - p. 145-153 , 2010

Link: https://doi.org/10.1149/..

4

Study of a Negative Threshold Voltage Shift in Positive Bia..:

Sato, Motoyuki ; Kamiyama, Satoshi ; Matsuki, Takeo...
Japanese Journal of Applied Physics. 49 (2010) 4S - p. 04DC24 , 2010

Link: https://doi.org/10.1143/..

5

Stress from Discontinuous SiN Liner for Fully Silicided Gat..:

Yamashita, Tomohiro ; Nishida, Yukio ; Okagaki, Takeshi...
Japanese Journal of Applied Physics. 47 (2008) 4S - p. 2569 , 2008

Link: https://doi.org/10.1143/..

6

Phase and Composition Control of Ni Fully Silicided Gates b..:

Yamamoto, Kazuhiko ; Sakashita, Shinsuke ; Sato, Yoshihiro...
Japanese Journal of Applied Physics. 47 (2008) 4S - p. 2398 , 2008

Link: https://doi.org/10.1143/..

7

High Performance Gate-First pMISFET with TiN/HfSiON Gate St..:

Kawahara, Takaaki ; Nishida, Yukio ; Sakashita, Shinsuke...
ECS Transactions. 11 (2007) 4 - p. 585-599 , 2007

Link: https://doi.org/10.1149/..

8

The Impact of F and N Incorporation Technique on Advanced G..:

Yugami, Jiro ; Hayashi, Takashi ; Nishida, Yukio.
ECS Transactions. 6 (2007) 3 - p. 637-653 , 2007

Link: https://doi.org/10.1149/..

9

Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics..:

Tsujikawa, Shimpei ; Shiga, Katsuya ; Umeda, Hiroshi.
Japanese Journal of Applied Physics. 46 (2007) 1R - p. 7 , 2007

Link: https://doi.org/10.1143/..

10

Enhanced Performance of Gate-First p-Channel Metal–Insulato..:

Kitano, Naomu ; Horie, Shinya ; Arimura, Hiroaki...
Japanese Journal of Applied Physics. 46 (2007) 12L - p. L1111 , 2007

Link: https://doi.org/10.1143/..

11

Diffusion Control Techniques for TiN Stacked Metal Gate Ele..:

Sakashita, Shinsuke ; Kawahara, Takaaki ; Mizutani, Masaharu...
Japanese Journal of Applied Physics. 46 (2007) 4S - p. 1859 , 2007

Link: https://doi.org/10.1143/..

12

Positive charge generation due to species of hydrogen durin..:

Tsujikawa, Shimpei ; Yugami, Jiro
Microelectronics Reliability. 45 (2005) 1 - p. 65-69 , 2005

Link: https://doi.org/10.1016/..

13

Copper Diffusion Behavior in SiO2/Si Structure During 400°C..:

Hozawa, Kazuyuki ; Yugami, Jiro
Japanese Journal of Applied Physics. 43 (2004) 1 - p. 1-8 , 2004

Link: https://doi.org/10.1143/..

14

Effects of remote-surface-roughness scattering on carrier m..:

Saito, Shin-ichi ; Torii, Kazuyoshi ; Shimamoto, Yasuhiro...
Applied Physics Letters. 84 (2004) 8 - p. 1395-1397 , 2004

Link: https://doi.org/10.1063/..

15

Copper Distribution near a SiO2/Si Interface under Low-Temp..:

Hozawa, Kazuyuki ; Isomae, Seiichi ; Yugami, Jiro
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 10 - p. 5887-5893 , 2002

Link: https://doi.org/10.1143/..