E-LIB Suche - Ergebnisse für: Kębłowski, A.

1

Minority carrier lifetime in HgCdTe(100) epilayers and thei..:

Kopytko, M ; Sobieski, J ; Gawron, W..
Semiconductor Science and Technology. 36 (2021) 5 - p. 055003 , 2021

Link: https://doi.org/10.1088/..

2

Molecular beam epitaxy growth and characterization of inter..:

Kubiszyn, Ł. ; Benyahia, D. ; Michalczewski, K....
Journal of Crystal Growth. 534 (2020) - p. 125512 , 2020

Link: https://doi.org/10.1016/..

3

Higher Operating Temperature IR Detectors of the MOCVD Grow..:

Madejczyk, P. ; Gawron, W. ; Kębłowski, A....
Journal of Electronic Materials. 49 (2020) 11 - p. 6908-6917 , 2020

Link: https://doi.org/10.1007/..

4

High operating temperature LWIR and VLWIR InAs1−xSbx optica..:

Kubiszyn, Ł. ; Michalczewski, K. ; Benyahia, D....
Infrared Physics & Technology. 97 (2019) - p. 116-122 , 2019

Link: https://doi.org/10.1016/..

5

Molecular beam epitaxy growth of InAs/AlSb superlattices on..:

Benyahia, D. ; Kubiszyn, Ł. ; Michalczewski, K....
Journal of Crystal Growth. 522 (2019) - p. 125-127 , 2019

Link: https://doi.org/10.1016/..

6

Numerical analysis of HgCdTe dual-band infrared detector:

Kopytko, M. ; Gawron, W. ; Kębłowski, A....
Optical and Quantum Electronics. 51 (2019) 3 - p. , 2019

Link: https://doi.org/10.1007/..

7

Electrical Properties of Midwave and Longwave InAs/GaSb Sup..:

Benyahia, D. ; Kubiszyn, Ł. ; Michalczewski, K....
Nanoscale Research Letters. 13 (2018) 1 - p. , 2018

Link: https://doi.org/10.1186/..

8

Study on the specific contact resistance of evaporated or e..:

Boguski, J. ; Kolwas, K. ; Kubiszyn, Ł....
Materials Science in Semiconductor Processing. 81 (2018) - p. 60-63 , 2018

Link: https://doi.org/10.1016/..

9

Optimization of the interfacial misfit array growth mode of..:

Benyahia, D. ; Kubiszyn, Ł. ; Michalczewski, K....
Journal of Crystal Growth. 483 (2018) - p. 26-30 , 2018

Link: https://doi.org/10.1016/..

10

Investigation on the InAs1–xSbxepilayers growth on GaAs (00..:

Benyahia, D. ; Kubiszyn, Ł. ; Michalczewski, K....
Journal of Semiconductors. 39 (2018) 3 - p. 033003 , 2018

Link: https://doi.org/10.1088/..

11

Investigation of hillocks formation on (1 0 0) HgCdTe layer..:

Kębłowski, A. ; Kopytko, M. ; Młynarczyk, K....
Infrared Physics & Technology. 84 (2017) - p. 87-93 , 2017

Link: https://doi.org/10.1016/..

12

Interfacial Misfit Array Technique for GaSb Growth on GaAs ..:

Benyahia, D. ; Kubiszyn, Ł. ; Michalczewski, K....
Journal of Electronic Materials. 47 (2017) 1 - p. 299-304 , 2017

Link: https://doi.org/10.1007/..

13

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Respo..:

Kopytko, M. ; Kębłowski, A. ; Madejczyk, P....
Journal of Electronic Materials. 46 (2017) 10 - p. 6045-6055 , 2017

Link: https://doi.org/10.1007/..

14

Recent progress in LWIR HOT photoconductors based on MOCVD ..:

Gawron, W ; Kębłowski, A ; Kopytko, M...
Semiconductor Science and Technology. 31 (2016) 10 - p. 105004 , 2016

Link: https://doi.org/10.1088/..

15

LWIR HgCdTe barrier photodiode with Auger-suppression:

Kopytko, M ; Kębłowski, A ; Gawron, W.
Semiconductor Science and Technology. 31 (2016) 3 - p. 035025 , 2016

Link: https://doi.org/10.1088/..