Kang, Bongkoo
59  Ergebnisse:
Personensuche X
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1

Channel-length dependence of the generation of interface st..:

Kim, Hyeokjin ; Roh, Giyoun ; Kang, Bongkoo
Japanese Journal of Applied Physics.  59 (2020)  SM - p. SMMC02 , 2020
 
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4

Characterization of fast relaxation by oxide-trapped charge..:

Kim, Hyeokjin ; Roh, Giyoun ; Kang, Bongkoo
Japanese Journal of Applied Physics.  59 (2020)  SM - p. SMMA01 , 2020
 
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5

Characterization of positive bias temperature instability c..:

Roh, Giyoun ; Kim, Hyeokjin ; Kwon, Youngkyu.
Microelectronics Reliability.  100-101 (2019)  - p. 113444 , 2019
 
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10

Effect of oxide-trapped charge on the anomalous drain avala..:

Yun, Yeohyeok ; Seo, Ji-Hoon ; Kwon, Young-Kyu.
Microelectronics Reliability.  100-101 (2019)  - p. 113449 , 2019
 
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13

Effect of HfSiON thickness on electron trap distributions o..:

Roh, Giyoun ; Kim, Hyeokjin ; Kwon, Youngkyu.
Microelectronics Reliability.  100-101 (2019)  - p. 113353 , 2019
 
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14

Method to estimate profile of threshold voltage degradation..:

Yun, Yeohyeok ; Seo, Ji-Hoon ; Son, Donghee.
Microelectronics Reliability.  88-90 (2018)  - p. 186-190 , 2018
 
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15

Increase in Power Conversion Efficiency of Bidirectional DC..:

Choi, Yoon-Geol ; Lee, Sang-Won ; Lee, Hyeon-Seok..
IEEE Transactions on Power Electronics.  33 (2018)  12 - p. 10539-10549 , 2018
 
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