E-LIB Suche - Ergebnisse für: Kang, Myounggon

1

Selective Erase Operation for Multiple Strings of 3D Ferroe..:

Ryu, Gyunseok ; Kang, Myounggon
IEEE Electron Device Letters. 45 (2024) 3 - p. 372-375 , 2024

Link: https://doi.org/10.1109/..

2

Current-Voltage Modeling of DRAM Cell Transistor Using Gene..:

Park, Jun Hui ; Kim, Jung Nam ; Lee, Seonhaeng...
IEEE Access. 12 (2024) - p. 23881-23886 , 2024

Link: https://doi.org/10.1109/..

3

Channel Potential of Bandgap-Engineered Tunneling Oxide (BE..:

Cho, Taeyoung ; Jung, Sungyeop ; Kang, Myounggon
Electronics. 13 (2024) 8 - p. 1573 , 2024

Link: https://doi.org/10.3390/..

4

Analyzing Various Structural and Temperature Characteristic..:

Cho, Sangki ; Kim, Sueyeon ; Kang, Myounggon..
Micromachines. 15 (2024) 4 - p. 450 , 2024

Link: https://doi.org/10.3390/..

5

An Optimized Device Structure with a Highly Stable Process ..:

Choi, Seonjun ; Kang, Myounggon ; Jung, Hong-sik..
Electronics. 13 (2024) 5 - p. 889 , 2024

Link: https://doi.org/10.3390/..

6

The Optimization of Program Operation for Low Power Consump..:

Yun, Myeongsang ; Lee, Gyuhyeon ; Ryu, Gyunseok..
Electronics. 13 (2024) 2 - p. 316 , 2024

Link: https://doi.org/10.3390/..

7

An Optimized Device Structure with Improved Erase Operation..:

Choi, Seonjun ; Park, Jin-Seong ; Kang, Myounggon..
Electronics. 13 (2024) 2 - p. 451 , 2024

Link: https://doi.org/10.3390/..

8

An Improved Structure Enabling Hole Erase Operation When Us..:

Choi, Seonjun ; Kang, Myounggon ; Song, Yun-Heub
Electronics. 12 (2023) 13 - p. 2945 , 2023

Link: https://doi.org/10.3390/..

9

Inhibited Channel Potential of 3D NAND Flash Memory String ..:

Cho, Taeyoung ; Kim, Hyunju ; Kang, Myounggon
Applied Sciences. 13 (2023) 5 - p. 2909 , 2023

Link: https://doi.org/10.3390/..

10

Improved Resistive and Synaptic Characteristics in Neuromor..:

Kim, Minkang ; Ju, Dongyeol ; Kang, Myounggon.
Nanomaterials. 13 (2023) 21 - p. 2859 , 2023

Link: https://doi.org/10.3390/..

11

Diverse synaptic weight adjustment of bio-inspired ZrOx-bas..:

Kim, Chaeun ; Lee, Yunseok ; Kim, Sunghun..
Materials Science in Semiconductor Processing. 157 (2023) - p. 107314 , 2023

Link: https://doi.org/10.1016/..

12

Analysis of Channel Potential Recovery According to the Bac..:

Ryu, Gyunseok ; Kim, Hyunju ; Lee, Jihwan.
Applied Sciences. 13 (2023) 6 - p. 3388 , 2023

Link: https://doi.org/10.3390/..

13

Circuit simulation of floating-gate FET (FGFET) for logic a..:

Kim, Yunjae ; Kim, Hyoungsoo ; Jeon, Jongwook..
Memories - Materials, Devices, Circuits and Systems. 6 (2023) - p. 100090 , 2023

Link: https://doi.org/10.1016/..

14

Investigation on floating-gate field-effect transistor for ..:

Kim, Sueyeon ; Cho, Sangki ; Choi, Insoo...
Journal of Physics D: Applied Physics. 56 (2023) 49 - p. 495105 , 2023

Link: https://doi.org/10.1088/..

15

SnO2-Based Memory Device with Filamentary Switching Mechani..:

Ismail, Muhammad ; Mahata, Chandreswar ; Kang, Myounggon.
Nanomaterials. 13 (2023) 18 - p. 2603 , 2023

Link: https://doi.org/10.3390/..