E-LIB Suche - Ergebnisse für: Karabeshkin, K. V.

1

Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Io..:

Karaseov, P. A. ; Karabeshkin, K. V. ; Struchkov, A. I....
Semiconductors. 57 (2023) 10 - p. 459-464 , 2023

Link: https://doi.org/10.1134/..

2

Radiation tolerance of GaN: the balance between radiation-s..:

Titov, A I ; Karabeshkin, K V ; Struchkov, A I..
Journal of Physics D: Applied Physics. 55 (2022) 17 - p. 175103 , 2022

Link: https://doi.org/10.1088/..

3

Comparative study of radiation tolerance of GaN and Ga2O3 p..:

Titov, A.I. ; Karabeshkin, K.V. ; Struchkov, A.I....
Vacuum. 200 (2022) - p. 111005 , 2022

Link: https://doi.org/10.1016/..

4

Silicon Light-Emitting Diodes with Luminescence from (113) ..:

Kalyadin, A. E. ; Shtel'makh, K. F. ; Aruev, P. N....
Semiconductors. 54 (2020) 6 - p. 687-690 , 2020

Link: https://doi.org/10.1134/..

5

The formation of radiation damage in GaN during successive ..:

Titov, A.I. ; Karaseov, P.A. ; Karabeshkin, K.V..
Vacuum. 173 (2020) - p. 109149 , 2020

Link: https://doi.org/10.1016/..

6

Formation of Au Nanoparticles and Features of Etching of a ..:

Tuzhilkin, M. S. ; Bespalova, P. G. ; Mishin, M. V....
Semiconductors. 54 (2020) 1 - p. 137-143 , 2020

Link: https://doi.org/10.1134/..

7

Do Chemical Effects Affect the Accumulation of Structural D..:

Titov, A. I. ; Karabeshkin, K. V. ; Karaseov, P. A..
Semiconductors. 53 (2019) 11 - p. 1415-1418 , 2019

Link: https://doi.org/10.1134/..

8

Effect of monatomic and molecular ion irradiation on time r..:

Titov, A.I. ; Karaseov, P.A. ; Karabeshkin, K.V...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458 (2019) - p. 164-168 , 2019

Link: https://doi.org/10.1016/..

9

Defect Formation under Nitrogen-Ion Implantation and Subseq..:

Sobolev, N. A. ; Sakharov, V. I. ; Serenkov, I. T....
Semiconductors. 53 (2019) 4 - p. 415-418 , 2019

Link: https://doi.org/10.1134/..

10

Defect Structure of GaAs Layers Implanted with Nitrogen Ion:

Sobolev, N. A. ; Kalyadin, A. E. ; Karabeshkin, K. V....
Technical Physics Letters. 44 (2018) 9 - p. 817-819 , 2018

Link: https://doi.org/10.1134/..

11

The Effect of Dose of Nitrogen-Ion Implantation on the Conc..:

Sobolev, N. A. ; Ber, B. Ya. ; Kazantsev, D. Yu....
Technical Physics Letters. 44 (2018) 7 - p. 574-576 , 2018

Link: https://doi.org/10.1134/..

12

Ranges of 10–350keV H and H 2ions in (111) diamond:

Popov, V.P. ; Ilnitskii, M.A. ; Pokhil, G.P....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 406 (2017) - p. 634-637 , 2017

Link: https://doi.org/10.1016/..

13

Dislocation-related photoluminescence in silicon implanted ..:

Sobolev, N. A. ; Kalyadin, A. E. ; Sakharov, V. I....
Technical Physics Letters. 43 (2017) 1 - p. 50-52 , 2017

Link: https://doi.org/10.1134/..

14

Single and molecular ion irradiation-induced effects in GaN..:

Karaseov, P A ; Karabeshkin, K V ; Titov, A I...
Journal of Physics D: Applied Physics. 50 (2017) 50 - p. 505110 , 2017

Link: https://doi.org/10.1088/..

15

Effect of an increase in the density of collision cascades ..:

Karabeshkin, K. V. ; Karaseov, P. A. ; Titov, A. I.
Semiconductors. 50 (2016) 8 - p. 989-995 , 2016

Link: https://doi.org/10.1134/..