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Karsthof, Robert
43  Ergebnisse:
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1

Impact of carbon injection in 4H-SiC on defect formation an..:

Bathen, Marianne Etzelmüller ; Karsthof, Robert ; Galeckas, Augustinas...
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108316 , 2024
Link: https://doi.org/10.1016/..
 
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2

Defect level in κ-Ga2O3 revealed by thermal admittance spec..:

Langørgen, Amanda ; Kalmann Frodason, Ymir ; Karsthof, Robert...
Journal of Applied Physics.  134 (2023)  1 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

Stability, Evolution and Diffusion of Intrinsic Point Defec..:

Bathen, Marianne Etzelmüller ; Karsthof, Robert ; Grossner, Ulrike.
Materials Science Forum.  1062 (2022)  - p. 371-375 , 2022
Link: https://doi.org/10.4028/..
 
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4

Cross‐Sectional Carrier Lifetime Profiling and Deep Level M..:

Galeckas, Augustinas ; Karsthof, Robert ; Gana, Kingsly...
physica status solidi (a).  220 (2022)  10 - p. , 2022
Link: https://doi.org/10.1002/..
 
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5

Formation of carbon interstitial-related defect levels by t..:

Karsthof, Robert ; Etzelmüller Bathen, Marianne ; Kuznetsov, Andrej.
Journal of Applied Physics.  131 (2022)  3 - p. , 2022
Link: https://doi.org/10.1063/..
 
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6

Light Absorption and Emission by Defects in Doped Nickel Ox..:

Karsthof, Robert ; Frodason, Ymir Kalmann ; Galeckas, Augustinas...
Advanced Photonics Research.  3 (2022)  11 - p. , 2022
Link: https://doi.org/10.1002/..
 
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7

Nickel vacancy acceptor in nickel oxide: Doping beyond ther..:

Karsthof, Robert ; Anton, Arthur Markus ; Kremer, Friedrich.
Physical Review Materials.  4 (2020)  3 - p. , 2020
Link: https://doi.org/10.1103/..
 
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8

Nickel Oxide–Based Heterostructures with Large Band Offsets:

Karsthof, Robert ; von Wenckstern, Holger ; Zúñiga-Pérez, Jesús..
physica status solidi (b).  257 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
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9

Oxide bipolar electronics: materials, devices and circuits:

Grundmann, Marius ; Klüpfel, Fabian ; Karsthof, Robert...
Journal of Physics D: Applied Physics.  49 (2016)  21 - p. 213001 , 2016
Link: https://doi.org/10.1088/..
 
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10

pn‐Heterojunction Diodes with n‐Type In2O3:

von Wenckstern, Holger ; Splith, Daniel ; Lanzinger, Stefan...
Advanced Electronic Materials.  1 (2015)  4 - p. , 2015
Link: https://doi.org/10.1002/..
 
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11

Interface Recombination Current in Type II Heterostructure ..:

Grundmann, Marius ; Karsthof, Robert ; von Wenckstern, Holger
ACS Applied Materials & Interfaces.  6 (2014)  17 - p. 14785-14789 , 2014
Link: https://doi.org/10.1021/..
 
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12

On the T2 trap in zinc oxide thin films:

Schmidt, Matthias ; Ellguth, Martin ; Karsthof, Robert...
physica status solidi (b).  249 (2011)  3 - p. 588-595 , 2011
Link: https://doi.org/10.1002/..
 
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13

Influence of heat treatments in H2 and Ar on the E1 center ..:

Langørgen, Amanda ; Zimmermann, Christian ; Kalmann Frodason, Ymir...
Journal of Applied Physics.  131 (2022)  11 - p. , 2022
Link: https://doi.org/10.1063/..
 
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14

The role of boron related defects in limiting charge carrie..:

Ghezellou, Misagh ; Kumar, Piyush ; Bathen, Marianne E...
APL Materials, 2023, 11:3,.  , 2023
Link: http://urn.kb.se/resolve..
 
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15

Cross-Sectional Carrier Lifetime Profiling and Deep Level M..:

Galeckas, Augustinas ; Karsthof, Robert ; Gana, Kingsly...
info:eu-repo/semantics/altIdentifier/doi/10.1002/pssa.202200449.  , 2023
Link: https://hdl.handle.net/2..
 
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