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Katzer, D.S.
253  Ergebnisse:
Personensuche X
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1

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam..:

Jin, E. N. ; Lang, A. C. ; Hardy, M. T....
Journal of Applied Physics.  127 (2020)  21 - p. , 2020
Link: https://doi.org/10.1063/..
 
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2

Electrical characterisation of epitaxial AlN/Nb2N heterostr..:

Downey, B.P. ; Katzer, D.S. ; Nepal, N....
Electronics Letters.  52 (2016)  14 - p. 1263-1264 , 2016
Link: https://doi.org/10.1049/..
 
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3

Critical issues for homoepitaxial GaN growth by molecular b..:

Storm, D.F. ; Hardy, M.T. ; Katzer, D.S....
Journal of Crystal Growth.  456 (2016)  - p. 121-132 , 2016
Link: https://doi.org/10.1016/..
 
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4

Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films..:

McConkie, T.O. ; Hardy, M.T. ; Storm, D.F....
Microscopy and Microanalysis.  22 (2016)  S3 - p. 1570-1571 , 2016
Link: https://doi.org/10.1017/..
 
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5

Effect of interfacial oxygen on the microstructure of MBE-g..:

Storm, D.F. ; McConkie, T. ; Katzer, D.S....
Journal of Crystal Growth.  409 (2015)  - p. 14-17 , 2015
Link: https://doi.org/10.1016/..
 
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6

Indium incorporation dynamics in N-polar InAlN thin films g..:

Hardy, M.T. ; Storm, D.F. ; Nepal, N....
Journal of Crystal Growth.  425 (2015)  - p. 119-124 , 2015
Link: https://doi.org/10.1016/..
 
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7

Effect of SiNx gate insulator thickness on electrical prope..:

Downey, B.P. ; Meyer, D.J. ; Katzer, D.S....
Solid-State Electronics.  106 (2015)  - p. 12-17 , 2015
Link: https://doi.org/10.1016/..
 
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8

Electrical characterization of Schottky contacts to N-polar..:

Downey, B.P. ; Meyer, D.J. ; Katzer, D.S...
Solid-State Electronics.  86 (2013)  - p. 17-21 , 2013
Link: https://doi.org/10.1016/..
 
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9

Ultrathin-barrier AlN/GaN heterostructures grown by rf plas..:

Storm, D.F. ; Deen, D.A. ; Katzer, D.S....
Journal of Crystal Growth.  380 (2013)  - p. 14-17 , 2013
Link: https://doi.org/10.1016/..
 
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10

Improved GaN-based HEMT performance by nanocrystalline diam..:

, In: 70th Device Research Conference,
Anderson, T.J. ; Pate, B.B. ; Binari, S.C.... - p. 155-156 , 2012
Link: https://doi.org/10.1109/..
 
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11

Oxygen incorporation in homoepitaxial N-polar GaN grown by ..:

Storm, D. F. ; Katzer, D. S. ; Meyer, D. J..
Journal of Applied Physics.  112 (2012)  1 - p. , 2012
Link: https://doi.org/10.1063/..
 
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12

Comparison of microstructure of N-polar GaN/AlGaN/GaN heter..:

Zhou, Lin ; Storm, D.F. ; Katzer, D.S...
Journal of Crystal Growth.  357 (2012)  - p. 25-29 , 2012
Link: https://doi.org/10.1016/..
 
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13

Atomic layer deposited Ta2O5 gate insulation for enhancing ..:

Deen, D. A. ; Storm, D. F. ; Bass, R....
Applied Physics Letters.  98 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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14

HfO2‐insulated gate N‐polar GaN HEMTs with high breakdown v..:

Meyer, D. J. ; Katzer, D. S. ; Deen, D. A....
physica status solidi (a).  208 (2011)  7 - p. 1630-1633 , 2011
Link: https://doi.org/10.1002/..
 
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15

Dependence of ohmic contact resistance on barrier thickness..:

Deen, D.A. ; Storm, D.F. ; Katzer, D.S...
Solid-State Electronics.  54 (2010)  6 - p. 613-615 , 2010
Link: https://doi.org/10.1016/..
 
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