E-LIB Suche - Ergebnisse für: Kaun, Stephen W

1

Erratum to "High indium content homogenous InAlN layers gro..:

Kyle, Erin C.H. ; Kaun, Stephen W. ; Wu, Feng..
Journal of Crystal Growth. 496-497 (2018) - p. 80 , 2018

Link: https://doi.org/10.1016/..

2

Ge doping of β-Ga2O3 films grown by plasma-assisted molecul..:

Ahmadi, Elaheh ; Koksaldi, Onur S. ; Kaun, Stephen W....
Applied Physics Express. 10 (2017) 4 - p. 041102 , 2017

Link: https://doi.org/10.7567/..

3

Chlorine-based dry etching ofβ-Ga2O3:

Hogan, Jack E ; Kaun, Stephen W ; Ahmadi, Elaheh..
Semiconductor Science and Technology. 31 (2016) 6 - p. 065006 , 2016

Link: https://doi.org/10.1088/..

4

High indium content homogenous InAlN layers grown by plasma..:

Kyle, Erin C.H. ; Kaun, Stephen W. ; Wu, Feng..
Journal of Crystal Growth. 454 (2016) - p. 164-172 , 2016

Link: https://doi.org/10.1016/..

5

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN he..:

Kaun, Stephen W ; Mazumder, Baishakhi ; Fireman, Micha N...
Semiconductor Science and Technology. 30 (2015) 5 - p. 055010 , 2015

Link: https://doi.org/10.1088/..

6

Increased p-type conductivity through use of an indium surf..:

Kyle, Erin C. H. ; Kaun, Stephen W. ; Young, Erin C..
Applied Physics Letters. 106 (2015) 22 - p. , 2015

Link: https://doi.org/10.1063/..

7

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-e..:

Ahmadi, Elaheh ; Wu, Feng ; Li, Haoran...
Semiconductor Science and Technology. 30 (2015) 5 - p. 055012 , 2015

Link: https://doi.org/10.1088/..

8

High-electron-mobility GaN grown on free-standing GaN templ..:

Kyle, Erin C. H. ; Kaun, Stephen W. ; Burke, Peter G....
Journal of Applied Physics. 115 (2014) 19 - p. , 2014

Link: https://doi.org/10.1063/..

9

Elimination of columnar microstructure in N-face InAlN, lat..:

Ahmadi, Elaheh ; Shivaraman, Ravi ; Wu, Feng...
Applied Physics Letters. 104 (2014) 7 - p. , 2014

Link: https://doi.org/10.1063/..

10

Contribution of alloy clustering to limiting the two-dimens..:

Ahmadi, Elaheh ; Chalabi, Hamidreza ; Kaun, Stephen W....
Journal of Applied Physics. 116 (2014) 13 - p. 133702 , 2014

Link: https://doi.org/10.1063/..

11

GaN-based high-electron-mobility transistor structures with..:

Kaun, Stephen W ; Ahmadi, Elaheh ; Mazumder, Baishakhi...
Semiconductor Science and Technology. 29 (2014) 4 - p. 045011 , 2014

Link: https://doi.org/10.1088/..

12

Molecular beam epitaxy for high-performance Ga-face GaN ele..:

Kaun, Stephen W ; Wong, Man Hoi ; Mishra, Umesh K.
Semiconductor Science and Technology. 28 (2013) 7 - p. 074001 , 2013

Link: https://doi.org/10.1088/..

13

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN het..:

Mazumder, Baishakhi ; Kaun, Stephen W. ; Lu, Jing...
Applied Physics Letters. 102 (2013) 11 - p. , 2013

Link: https://doi.org/10.1063/..

14

Correlation between threading dislocation density and sheet..:

Kaun, Stephen W. ; Wong, Man Hoi ; Mishra, Umesh K..
Applied Physics Letters. 100 (2012) 26 - p. 262102 , 2012

Link: https://doi.org/10.1063/..

15

Effect of dislocations on electron mobility in AlGaN/GaN an..:

Kaun, Stephen W. ; Burke, Peter G. ; Hoi Wong, Man...
Applied Physics Letters. 101 (2012) 26 - p. , 2012

Link: https://doi.org/10.1063/..