E-LIB Suche - Ergebnisse für: Kazior, Thomas E.

1

Emerging Millimeter-Wave Device Technology - Next Generatio..:

, In: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,

Kazior, Thomas E. ; Jones, Gregory M. ; Chang, Tsu-Hsi - p. 287-290 , 2022

Link: https://doi.org/10.1109/..

2

More Than Moore - Wafer Scale Integration of Dissimilar Mat..:

, In: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),

Kazior, Thomas E. ; LaRoche, Jeffery R. ; Ip, Kelly... - p. 1-1 , 2015

Link: https://doi.org/10.1109/..

3

Beyond CMOS: heterogeneous integration of III–V devices, RF..:

Kazior, Thomas E.
Philosophical Transactions: Mathematical, Physical and Engineering Sciences. 372 (2014) 2012 - p. 1-15 , 2014

Link: https://www.jstor.org/st..

4

(Invited) Heterogeneous Integration of III-V Devices and Si..:

Kazior, Thomas E. ; LaRoche, J. ; Hoke, W.
ECS Transactions. 50 (2013) 9 - p. 1039-1045 , 2013

Link: https://doi.org/10.1149/..

5

(Invited) GaAs MIS Structures–Hopeless or Promising?:

Gatos, Harry C. ; Lagowski, Jacek ; Kazior, Thomas E.
Japanese Journal of Applied Physics. 22 (1983) S1 - p. 11 , 1983

Link: https://doi.org/10.7567/..

6

GaN technology for microwave and millimeter wave applicatio..:

, In: 2010 IEEE MTT-S International Microwave Symposium,

Kolias, N. J. ; Whelan, C. S. ; Kazior, T. E.. - p. 1-1 , 2010

Link: https://doi.org/10.1109/..

7

Monolithic III-V/Si Integration:

Fitzgerald, Eugene ; Bulsara, M. T. ; Bai, Y....
ECS Transactions. 19 (2009) 5 - p. 345-350 , 2009

Link: https://doi.org/10.1149/..

8

Monolithic integration of InP-based transistors on Si subst..:

Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M....
Journal of Crystal Growth. 311 (2009) 7 - p. 1979-1983 , 2009

Link: https://doi.org/10.1016/..

9

Engineering Substrates for 3D Integration of III-V and CMOS:

Herrick, Katherine J. ; Kazior, T. E. ; LaRoche, J. R....
ECS Transactions. 16 (2008) 8 - p. 227-234 , 2008

Link: https://doi.org/10.1149/..

10

Monolithic III-V/Si Integration:

Fitzgerald, Eugene A. ; Bulsara, M. T. ; Bai, Y....
ECS Transactions. 16 (2008) 10 - p. 1015-1020 , 2008

Link: https://doi.org/10.1149/..

11

Reliability of metamorphic HEMTs on GaAs substrates:

Marsh, P.F ; Whelan, C.S ; Hoke, W.E..
Microelectronics Reliability. 42 (2002) 7 - p. 997-1002 , 2002

Link: https://doi.org/10.1016/..

12

A comparison of channel indium content in low noise metamor..:

, In: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107),

Whelan, C.S. ; Lardizabal, S.M. ; Buhles, P.M.... - p. 349,350,351,352 , 2000

Link: https://doi.org/10.1109/..

13

Optimization of a Low Damage, High Resolution Etch Process ..:

Olson, R. J. ; Kazior, T. E. ; Lane, B...
Journal of The Electrochemical Society. 143 (1996) 1 - p. 288-292 , 1996

Link: https://doi.org/10.1149/..

14

A single chip 2.20 GHz T/R module:

, In: IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits,

Schindler, M.J. ; Chu, S.L. ; Kazior, T.E... - p. 99,100,101,102 , 1990

Link: https://doi.org/10.1109/..

15

Isolation Implant Studies in GaAs:

Kazior, T. E.
Journal of The Electrochemical Society. 137 (1990) 7 - p. 2257-2260 , 1990

Link: https://doi.org/10.1149/..