E-LIB Suche - Ergebnisse für: Kazuya Ohuchi, Kazuya Ohuchi

1

A High-Performance 0.05 µm SOI MOS FET: Possibility of Velo..:

Kazuya Ohuchi, Kazuya Ohuchi ; Ryuji Ohba, Ryuji Ohba ; Hiromi Niiyama, Hiromi Niiyama..
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 960 , 1996

Link: https://doi.org/10.1143/..

2

Influence of Primary Particle Morphology and Hydrophilicity..:

Li, Shanglin ; Chen, Zhaoyue ; Yamamoto, Kentaro...
Advanced Materials Interfaces. 11 (2024) 7 - p. , 2024

Link: https://doi.org/10.1002/..

3

Improvement of Line-to-line TDDB by Cu and Barrier-metal Re..:

, In: 2022 IEEE International Interconnect Technology Conference (IITC),

Noda, Mitsuhiko ; Fujii, Kotaro ; Yanai, Naomi... - p. 45-47 , 2022

Link: https://doi.org/10.1109/..

4

Foreword:

, In: 2016 16th International Workshop on Junction Technology (IWJT),

Yu-Long Jiang ; Ohuchi, Kazuya ; Qin, Shu - p. 1-1 , 2016

Link: https://doi.org/10.1109/..

5

Accurate Method of Measuring Specific Contact Resistivity o..:

Ohuchi, Kazuya ; Lavoie, Christian ; Yang, Bin...
Japanese Journal of Applied Physics. 51 (2012) 10R - p. 101302 , 2012

Link: https://doi.org/10.1143/..

6

Foreword:

, In: 2012 12th International Workshop on Junction Technology,

Yu-Long Jiang ; Shishiguchi, Seiichi ; Ohuchi, Kazuya... - p. 1-1 , 2012

Link: https://doi.org/10.1109/..

7

Accurate Method of Measuring Specific Contact Resistivity o..:

Ohuchi, Kazuya ; Lavoie, Christian ; Yang, Bin...
Japanese Journal of Applied Physics. 51 (2012) 10R - p. 101302 , 2012

Link: https://doi.org/10.7567/..

8

Accurate Measurement of Silicide Specific Contact Resistivi..:

Ohuchi, Kazuya ; Kusunoki, Naoki ; Matsuoka, Fumitomo
Japanese Journal of Applied Physics. 50 (2011) 4S - p. 04DA03 , 2011

Link: https://doi.org/10.1143/..

9

Accurate Measurement of Silicide Specific Contact Resistivi..:

Ohuchi, Kazuya ; Kusunoki, Naoki ; Matsuoka, Fumitomo
Japanese Journal of Applied Physics. 50 (2011) 4S - p. 04DA03 , 2011

Link: https://doi.org/10.7567/..

10

Material and Integration Issues for Rare Earth Silicides as..:

D'Emic, Christopher P. ; Ohuchi, Kazuya ; Murray, Conal...
ECS Transactions. 13 (2008) 1 - p. 389-396 , 2008

Link: https://doi.org/10.1149/..

11

Silicides for 22nm and Beyond:

Besser, Paul R. ; Lavoie, Christian ; Murray, Conal..
ECS Transactions. 13 (2008) 1 - p. 377-388 , 2008

Link: https://doi.org/10.1149/..

12

A high performance pMOSFET with two-step recessed SiGe-S/D ..:

Yasutake, Nobuaki ; Azuma, Atsushi ; Ishida, Tatsuya...
Solid-State Electronics. 51 (2007) 11-12 - p. 1437-1443 , 2007

Link: https://doi.org/10.1016/..

13

Role of host plant volatile in the host-finding behavior of..:

Hori, Masatoshi ; Ohuchi, Kazuya ; Matsuda, Kazuhiro
Applied Entomology and Zoology. 41 (2006) 2 - p. 357-363 , 2006

Link: https://doi.org/10.1303/..

14

Suppression of Thermally Induced Leakage of NiSi-Silicided ..:

Tsuchiaki, Masakatsu ; Ohuchi, Kazuya ; Nishiyama, Akira
Japanese Journal of Applied Physics. 44 (2005) 4R - p. 1673 , 2005

Link: https://doi.org/10.1143/..

15

Junction Leakage Generation by NiSi Thermal Instability Cha..:

Tsuchiaki, Masakatsu ; Ohuchi, Kazuya ; Hongo, Chie
Japanese Journal of Applied Physics. 43 (2004) 8R - p. 5166 , 2004

Link: https://doi.org/10.1143/..