Khakbaz, Pedram
14  Ergebnisse:
Personensuche X
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1

Multi-Scale Modeling of Transistors Based on the 2D Semicon..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
 
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2

Defects in Strontium Titanate: A First Principles Study:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Bahrami, Mina ; Waldhoer, Dominic ; Khakbaz, Pedram... - p. 145-148 , 2023
 
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5

Modeling Low and High Field Uniform Transport in Monolayer ..:

, In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS),
 
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7

Titanium Carbide MXene as NH3 Sensor: Realistic First-Princ..:

Khakbaz, Pedram ; Moshayedi, Milad ; Hajian, Sajjad...
The Journal of Physical Chemistry C.  123 (2019)  49 - p. 29794-29803 , 2019
 
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9

A study of metal-MoS2 contacts by using an in-house develop..:

Lizzit, Daniel ; Khakbaz, Pedram ; Driussi, Francesco..
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2022.108365.  , 2022
 
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10

A study of metal-MoS2 contacts by using an in-house develop..:

Lizzit, Daniel ; Khakbaz, Pedram ; Driussi, Francesco..
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2022.108365.  , 2022
 
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11

A study of metal-MoS2 contacts by using an in-house develop..:

Lizzit, Daniel ; Khakbaz, Pedram ; Driussi, Francesco..
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2022.108365.  , 2022
 
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12

DFT study of graphene doping due to metal contacts:

KHAKBAZ, PEDRAM ; Driussi, F ; Gambi, A...
info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-0940-4.  , 2019
 
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