E-LIB Suche - Ergebnisse für: Kiessling, F.-M.

1

Technology development of high purity germanium crystals fo..:

Abrosimov, N. ; Czupalla, M. ; Dropka, N....
Journal of Crystal Growth. 532 (2020) - p. 125396 , 2020

Link: https://doi.org/10.1016/..

2

Defect formation in Si-crystals grown on large diameter bul..:

Rost, H.-J. ; Menzel, R. ; Siche, D....
Journal of Crystal Growth. 500 (2018) - p. 5-10 , 2018

Link: https://doi.org/10.1016/..

3

Characterization of a 75 kg multicrystalline Si ingot grown..:

Linke, D. ; Dropka, N. ; Kiessling, F.M....
Solar Energy Materials and Solar Cells. 130 (2014) - p. 652-660 , 2014

Link: https://doi.org/10.1016/..

4

Characterization of mc-Si directionally solidified in trave..:

Kiessling, F.-M. ; Büllesfeld, F. ; Dropka, N....
Journal of Crystal Growth. 360 (2012) - p. 81-86 , 2012

Link: https://doi.org/10.1016/..

5

TEM investigation of precipitates in VCz GaAs crystals:

Kirmse, H. ; Kiessling, F.‐M. ; Häusler, I..
Crystal Research and Technology. 44 (2009) 10 - p. 1067-1077 , 2009

Link: https://doi.org/10.1002/..

6

Investigation of asymmetry effects in a heater-magnet modul..:

Kasjanow, H. ; Nacke, B. ; Eichler, St....
Journal of Crystal Growth. 310 (2008) 7-9 - p. 1540-1545 , 2008

Link: https://doi.org/10.1016/..

7

Vacancy-type defects in boron-reduced VCz GaAs crystals:

Kiessling, F.-M. ; Rudolph, P.
Journal of Physics and Chemistry of Solids. 69 (2008) 2-3 - p. 289-293 , 2008

Link: https://doi.org/10.1016/..

8

Defect distribution in boron-reduced GaAs crystals grown by..:

Kiessling, F.-M. ; Albrecht, M. ; Irmscher, K....
Journal of Crystal Growth. 310 (2008) 7-9 - p. 1418-1423 , 2008

Link: https://doi.org/10.1016/..

9

Growth and characterization of GaAs crystals produced by th..:

Rudolph, P. ; Kiessling, F.-M.
Journal of Crystal Growth. 292 (2006) 2 - p. 532-537 , 2006

Link: https://doi.org/10.1016/..

10

Dislocation patterning during crystal growth of semiconduct..:

Frank-Rotsch, Ch. ; Juda, U. ; Kiessling, F.-M..
Materials Science and Technology. 21 (2005) 12 - p. 1450-1454 , 2005

Link: https://doi.org/10.1179/..

11

Scaling of dislocation cells in GaAs crystals by global num..:

Rudolph, P. ; Frank-Rotsch, Ch. ; Juda, U..
Materials Science and Engineering: A. 400-401 (2005) - p. 170-174 , 2005

Link: https://doi.org/10.1016/..

12

Growth of GaAs crystals from Ga-rich melts by the VCz metho..:

Kiessling, F.-M. ; Rudolph, P. ; Neubert, M....
Journal of Crystal Growth. 269 (2004) 2-4 - p. 218-228 , 2004

Link: https://doi.org/10.1016/..

13

The nitrogen–hydrogen–vacancy complex in GaAs:

Ulrici, W. ; Kiessling, F.‐M. ; Rudolph, P.
physica status solidi (b). 241 (2004) 6 - p. 1281-1285 , 2004

Link: https://doi.org/10.1002/..

14

Non-stoichiometric growth of GaAs by the vapour pressure co..:

Kiessling, F.-M. ; Neubert, M. ; Rudolph, P..
Materials Science in Semiconductor Processing. 6 (2003) 5-6 - p. 303-306 , 2003

Link: https://doi.org/10.1016/..

15

Atomic Structure of Acceptors in Cd0.22Hg0.78Te: Discrimina..:

Baroux, L. ; Corbel, C. ; Kiessling, F. M....
Physical Review Letters. 75 (1995) 3 - p. 557-560 , 1995

Link: https://doi.org/10.1103/..