E-LIB Suche - Ergebnisse für: Kim, Bong Ho

1

Influence of Channel Structure on the Subthreshold Swing of..:

Jeong, Jaeyong ; Kim, Jongmin ; Lee, Jisung...
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 3390-3395 , 2024

Link: https://doi.org/10.1109/..

2

Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on In..:

Suh, Yoon-Je ; Jeong, Jaeyong ; Kim, Bong Ho...
IEEE Electron Device Letters. 45 (2024) 5 - p. 766-769 , 2024

Link: https://doi.org/10.1109/..

3

Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet ..:

Kim, Seong Kwang ; Lim, Hyeong-Rak ; Jeong, Jaejoong...
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 393-399 , 2024

Link: https://doi.org/10.1109/..

4

Low Operating Voltage and Immediate Read‐After‐Write of HZO..:

Kim, Bong Ho ; Kuk, Song‐Hyeon ; Kim, Seong Kwang...
Advanced Electronic Materials. 10 (2023) 1 - p. , 2023

Link: https://doi.org/10.1002/..

5

Strategy for 3D Ferroelectric Transistor: Critical Surface ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Kuk, Song-Hyeon ; Han, Jae-Hoon ; Kim, Bong Ho.. - p. 1-2 , 2023

Link: https://doi.org/10.23919..

6

Fully CMOS-Compatible Room-Temperature Waveguide-Integrated..:

, In: 2023 International Electron Devices Meeting (IEDM),

Shim, Joonsup ; Lim, Jinha ; Kim, Inki... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

7

Role of Inter-Layer Dielectric on the Electrical and Heat D..:

, In: 2023 International Electron Devices Meeting (IEDM),

Kim, Seong Kwang ; Lim, Hyeong-Rak ; Shim, Joonsup... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

8

Cryogenic RF Transistors and Routing Circuits Based on 3D S..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Jeong, Jaeyong ; Kim, Seong Kwang ; Suh, Yoon-Je... - p. 1-2 , 2023

Link: https://doi.org/10.23919..

9

Thermal Management in Multi-Finger GaN-on-Si HEMTs: Underst..:

, In: 2023 International Electron Devices Meeting (IEDM),

Jeong, Jaeyong ; Choi, Sung Joon ; Shim, Joonsup... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

10

Impact of the channel thickness fluctuation on the subthres..:

, In: 2023 International Electron Devices Meeting (IEDM),

Jeong, Jaeyong ; Kim, Jongmin ; Lee, Jisung... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

11

Contact and Interface Engineering of MoS2-Based Photodetect..:

Kim, Bong Ho ; Kim, Dong Wook ; Kwon, Soon Hyeong..
Electronic Materials Letters. 19 (2023) 6 - p. 564-570 , 2023

Link: https://doi.org/10.1007/..

12

Examination of Ferroelectric FET for "Cold" Nonvolatile Mem..:

Kuk, Song-Hyeon ; Han, Seung-Min ; Kim, Bong Ho...
IEEE Transactions on Electron Devices. 70 (2023) 8 - p. 4122-4127 , 2023

Link: https://doi.org/10.1109/..

13

IL Scavenging and Recovery Strategies to Improve the Perfor..:

, In: 2023 International Electron Devices Meeting (IEDM),

Kim, Bong Ho ; Kim, Seong Kwang ; Kuk, Song-hyeon... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

14

Ultra-low-current driven InGaN blue micro light-emitting di..:

Baek, Woo Jin ; Park, Juhyuk ; Shim, Joonsup...
Nature Communications. 14 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

15

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching ..:

Kim, Bong Ho ; Kuk, Song‐Hyeon ; Kim, Seong Kwang...
Advanced Electronic Materials. 9 (2023) 5 - p. , 2023

Link: https://doi.org/10.1002/..