E-LIB Suche - Ergebnisse für: Kizilyalli, I. C.

1

Nuclear microprobe investigation of the effects of ionizati..:

Vizkelethy, G. ; King, M.P. ; Aktas, O...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 404 (2017) - p. 264-268 , 2017

Link: https://doi.org/10.1016/..

2

Switching characterization of vertical GaN PiN diodes:

, In: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),

Matthews, C. ; Flicker, J. ; Kaplar, R.... - p. 135-138 , 2016

Link: https://doi.org/10.1109/..

3

Identification of the primary compensating defect level res..:

King, M. P. ; Kaplar, R. J. ; Dickerson, J. R....
Applied Physics Letters. 109 (2016) 18 - p. , 2016

Link: https://doi.org/10.1063/..

4

Experimental observation of RF avalanche gain in GaN‐based ..:

Fay, P. ; Aktas, O. ; Bour, D..
Electronics Letters. 51 (2015) 13 - p. 1009-1010 , 2015

Link: https://doi.org/10.1049/..

5

Characterization of vertical GaN p–n diodes and junction fi..:

Kizilyalli, I C ; Aktas, O
Semiconductor Science and Technology. 30 (2015) 12 - p. 124001 , 2015

Link: https://doi.org/10.1088/..

6

Reliability of large periphery GaN-on-Si HFETs:

Singhal, S. ; Li, T. ; Chaudhari, A....
Microelectronics Reliability. 46 (2006) 8 - p. 1247-1253 , 2006

Link: https://doi.org/10.1016/..

7

A 2 million transistor digital processor with 120 nm gates ..:

Watson, G.P. ; Kizilyalli, I.C. ; Miller, M....
Microelectronic Engineering. 53 (2000) 1-4 - p. 101-104 , 2000

Link: https://doi.org/10.1016/..

8

Extending Optical Lithography Limits: Demonstration by Devi..:

Watson, G. P. ; Kizilyalli, I. C. ; Cirelli, R. A....
Journal of Photopolymer Science and Technology. 13 (2000) 3 - p. 485-491 , 2000

Link: https://doi.org/10.2494/..

9

Impact of nanostructure research on conventional solid-stat..:

Hess, K. ; Register, L.F. ; Tuttle, B...
Physica E: Low-dimensional Systems and Nanostructures. 3 (1998) 1-3 - p. 1-7 , 1998

Link: https://doi.org/10.1016/..

10

Coupled Electron-Hole Dynamics at theSi/SiO2Interface:

Wang, W. ; Lüpke, G. ; Ventra, M. Di...
Physical Review Letters. 81 (1998) 19 - p. 4224-4227 , 1998

Link: https://doi.org/10.1103/..

11

Ultrahigh vacuum–scanning tunneling microscopy nanofabricat..:

Lyding, J.W. ; Hess, K. ; Abeln, G.C....
Applied Surface Science. 130-132 (1998) - p. 221-230 , 1998

Link: https://doi.org/10.1016/..

12

Stacked high-ε gate dielectric for gigascale integration of..:

Roy, P. K. ; Kizilyalli, I. C.
Applied Physics Letters. 72 (1998) 22 - p. 2835-2837 , 1998

Link: https://doi.org/10.1063/..

13

Accurate base and collector current modeling of polysilicon..:

Kizilyalli, I. C. ; Rambaud, M. M. ; Ham, T. E....
Journal of Applied Physics. 79 (1996) 5 - p. 2738-2744 , 1996

Link: https://doi.org/10.1063/..

14

Reduction of hot electron degradation in metal oxide semico..:

Lyding, J. W. ; Hess, K. ; Kizilyalli, I. C.
Applied Physics Letters. 68 (1996) 18 - p. 2526-2528 , 1996

Link: https://doi.org/10.1063/..

15

Diffusion parameters of indium for silicon process modeling:

Kizilyalli, I. C. ; Rich, T. L. ; Stevie, F. A..
Journal of Applied Physics. 80 (1996) 9 - p. 4944-4947 , 1996

Link: https://doi.org/10.1063/..