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Kom Kammeugne, Roméo
16  Ergebnisse:
Personensuche X
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1

On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
Journal of Electronics and Electrical Engineering.  , 2023
Link: https://doi.org/10.37256..
 
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2

In Depth Parasitic Capacitance Analysis on GaN-HEMTs with R..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Frutuoso, Tadeu Mota...
Journal of Electronics and Electrical Engineering.  , 2022
Link: https://doi.org/10.37256..
 
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3

Thorough electrical characterization of the mechanisms cont..:

Kom Kammeugne, Roméo
NNT: 2022GRALT039.  , 2022
Link: https://theses.hal.scien..
 
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4

Thorough electrical characterization of the mechanisms cont..:

Kom Kammeugne, Roméo
NNT: 2022GRALT039.  , 2022
Link: https://theses.hal.scien..
 
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5

Ultra-fast CV methods (< 10µs) for interface trap spectrosc..:

Mota Frutuoso, Tadeu ; Garros, Xavier ; Lugo-Alvarez, José...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764550.  , 2022
Link: https://hal.science/hal-..
 
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6

Ultra-fast CV methods (< 10µs) for interface trap spectrosc..:

Mota Frutuoso, Tadeu ; Garros, Xavier ; Lugo-Alvarez, José...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764550.  , 2022
Link: https://hal.science/hal-..
 
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7

Thorough electrical characterization of the mechanisms cont..:

Kom Kammeugne, Roméo
NNT: 2022GRALT039.  , 2022
Link: https://theses.hal.scien..
 
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8

Ultra-fast CV methods (< 10µs) for interface trap spectrosc..:

Mota Frutuoso, Tadeu ; Garros, Xavier ; Lugo-Alvarez, José...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRPS48227.2022.9764550.  , 2022
Link: https://hal.science/hal-..
 
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9

Caractérisation électrique approfondie des mécanismes contr..:

Kom kammeugne, Roméo
http://www.theses.fr/2022GRALT039/document.  , 2022
Link: http://www.theses.fr/202..
 
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10

On-wafer drain current aariability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
info:eu-repo/semantics/altIdentifier/doi/10.37256/jeee.2120232132.  , 2023
Link: https://hal.science/hal-..
 
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11

On-wafer drain current aariability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
info:eu-repo/semantics/altIdentifier/doi/10.37256/jeee.2120232132.  , 2023
Link: https://hal.science/hal-..
 
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12

On-wafer drain current aariability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
info:eu-repo/semantics/altIdentifier/doi/10.37256/jeee.2120232132.  , 2023
Link: https://hal.science/hal-..
 
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13

On-wafer drain current aariability in GaN MIS-HEMT on 200-m..:

Kammeugne, Romeo Kom ; Leroux, Charles ; Theodorou, Christoforos...
info:eu-repo/semantics/altIdentifier/doi/10.37256/jeee.2120232132.  , 2023
Link: https://hal.science/hal-..
 
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14

New insights into low frequency noise (LFN) sources analysi..:

Kom Kammeugne, R. ; Theodorou, C. ; Leroux, C....
Solid-State Electronics.  200 (2023)  - p. 108555 , 2023
Link: https://doi.org/10.1016/..
 
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15

Accurate statistical extraction of AlGaN/GaN HEMT device pa..:

Kom Kammeugne, R. ; Leroux, C. ; Cluzel, J....
Solid-State Electronics.  184 (2021)  - p. 108078 , 2021
Link: https://doi.org/10.1016/..
 
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