E-LIB Suche - Ergebnisse für: Konyaev, V P

1

Semiconductor Lasers with Improved Lasing Characteristics:

Danilov, A. I. ; Ivanov, A. V. ; Konyaev, V. P....
Bulletin of the Lebedev Physics Institute. 50 (2023) S4 - p. S405-S417 , 2023

Link: https://doi.org/10.3103/..

2

High-power pulsed hybrid semiconductor lasers emitting in t..:

Bagaev, T.A. ; Gul'tikov, N.V. ; Ladugin, M.A....
Quantum Electronics. 51 (2021) 10 - p. 912-914 , 2021

Link: https://doi.org/10.1070/..

3

Triple integrated laser – thyristor:

Bagaev, T.A. ; Ladugin, M.A. ; Padalitsa, A.A....
Quantum Electronics. 50 (2020) 11 - p. 1001-1003 , 2020

Link: https://doi.org/10.1070/..

4

Continuous-wave laser diodes based on epitaxially integrate..:

Ladugin, M A ; Gul'tikov, N V ; Marmalyuk, A A..
Quantum Electronics. 49 (2019) 10 - p. 905-908 , 2019

Link: https://doi.org/10.1070/..

5

Double integrated laser-thyristor:

Bagaev, T.A. ; Ladugin, M.A. ; Padalitsa, A.A....
Quantum Electronics. 49 (2019) 11 - p. 1011-1013 , 2019

Link: https://doi.org/10.1070/..

6

Compact laser diode array based on epitaxially integrated A..:

Ladugin, M A ; Bagaev, T A ; Marmalyuk, A A...
Quantum Electronics. 48 (2018) 11 - p. 993-995 , 2018

Link: https://doi.org/10.1070/..

7

A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/Ga..:

Slipchenko, S. O. ; Podoskin, A. A. ; Rozhkov, A. V....
Journal of Applied Physics. 116 (2014) 8 - p. , 2014

Link: https://doi.org/10.1063/..

8

Laser-diode arrays based on epitaxial integrated heterostru..:

Konyaev, V. P. ; Marmalyuk, A. A. ; Ladugin, M. A....
Semiconductors. 48 (2014) 1 - p. 99-103 , 2014

Link: https://doi.org/10.1134/..

9

Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostru..:

Marmalyuk, A. A. ; Andreev, A. Yu. ; Konyaev, V. P....
Semiconductors. 48 (2014) 1 - p. 115-119 , 2014

Link: https://doi.org/10.1134/..

10

On the control efficiency of a high-power laser thyristor e..:

Slipchenko, S. O. ; Podoskin, A. A. ; Vasil'eva, V. V....
Semiconductors. 48 (2014) 5 - p. 697-699 , 2014

Link: https://doi.org/10.1134/..

11

AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved the..:

Marmalyuk, A A ; Ladugin, M A ; Andreev, A Yu...
Quantum Electronics. 43 (2013) 10 - p. 895-897 , 2013

Link: https://doi.org/10.1070/..

12

Estimation of the reliability of heterolasers subjected to ..:

Bogatov, Alexandr P ; Kochetkov, A A ; Konyaev, V P
Quantum Electronics. 41 (2011) 2 - p. 99-102 , 2011

Link: https://doi.org/10.1070/..

13

Laser diodes with several emitting regions (λ = 800–1100 nm..:

Marmalyuk, A. A. ; Davydova, E. I. ; Zverkov, M. V....
Semiconductors. 45 (2011) 4 - p. 519-525 , 2011

Link: https://doi.org/10.1134/..

14

808-nm laser diode bars based on epitaxially stacked double..:

Davydova, Evgeniya I ; Konyaev, V P ; Ladugin, M A...
Quantum Electronics. 40 (2010) 8 - p. 682-684 , 2010

Link: https://doi.org/10.1070/..

15

Dual-wavelength laser diodes based on epitaxially stacked h..:

Davydova, Evgeniya I ; Konyaev, V P ; Ladugin, M A...
Quantum Electronics. 40 (2010) 8 - p. 697-699 , 2010

Link: https://doi.org/10.1070/..