E-LIB Suche - Ergebnisse für: Kordina, Olof

1

Impact of in situ NH3 pre-treatment of LPCVD SiN passivatio..:

Chen, Ding-Yuan ; Persson, Axel R ; Wen, Kai-Hsin...
Semiconductor Science and Technology. 37 (2022) 3 - p. 035011 , 2022

Link: https://doi.org/10.1088/..

2

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:

Gao, Zhan ; Rampazzo, Fabiana ; Meneghini, Matteo...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021

Link: https://doi.org/10.1016/..

3

N-polar AlN nucleation layers grown by hot-wall MOCVD on Si..:

Zhang, Hengfang ; Paskov, Plamen P. ; Kordina, Olof..
Physica B: Condensed Matter. 580 (2020) - p. 411819 , 2020

Link: https://doi.org/10.1016/..

4

Transmorphic epitaxial growth of AlN nucleation layers on S..:

Lu, Jun ; Chen, Jr-Tai ; Dahlqvist, Martin...
Applied Physics Letters. 115 (2019) 22 - p. , 2019

Link: https://doi.org/10.1063/..

5

Erratum: "A GaN–SiC hybrid material for high-frequency and ..:

Chen, Jr-Tai ; Bergsten, Johan ; Lu, Jun...
Applied Physics Letters. 113 (2018) 7 - p. , 2018

Link: https://doi.org/10.1063/..

6

A versatile low-resistance ohmic contact process with ohmic..:

Lin, Yen-Ku ; Bergsten, Johan ; Leong, Hector...
Semiconductor Science and Technology. 33 (2018) 9 - p. 095019 , 2018

Link: https://doi.org/10.1088/..

7

A GaN–SiC hybrid material for high-frequency and power elec..:

Chen, Jr-Tai ; Bergsten, Johan ; Lu, Jun...
Applied Physics Letters. 113 (2018) 4 - p. , 2018

Link: https://doi.org/10.1063/..

8

Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption a..:

Sukkaew, Pitsiri ; Danielsson, Örjan ; Kordina, Olof..
The Journal of Physical Chemistry C. 121 (2017) 2 - p. 1249-1256 , 2017

Link: https://doi.org/10.1021/..

9

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorpti..:

Sukkaew, Pitsiri ; Kalered, Emil ; Janzén, Erik...
The Journal of Physical Chemistry C. 122 (2017) 1 - p. 648-661 , 2017

Link: https://doi.org/10.1021/..

10

Silicon Chemistry in Fluorinated Chemical Vapor Deposition ..:

Stenberg, Pontus ; Sukkaew, Pitsiri ; Farkas, Ildiko...
The Journal of Physical Chemistry C. 121 (2017) 5 - p. 2711-2720 , 2017

Link: https://doi.org/10.1021/..

11

Vector Magnetometry Using Silicon Vacancies in4H-SiC Under ..:

Niethammer, Matthias ; Widmann, Matthias ; Lee, Sang-Yun...
Physical Review Applied. 6 (2016) 3 - p. , 2016

Link: https://doi.org/10.1103/..

12

Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Dev..:

Chen, Jr-Tai ; Janzén, Erik ; Rorsman, Niklas...
ECS Transactions. 75 (2016) 12 - p. 61-65 , 2016

Link: https://doi.org/10.1149/..

13

Deep levels in as-grown and electron-irradiated n-type GaN ..:

Duc, Tran Thien ; Pozina, Galia ; Son, Nguyen Tien...
Journal of Applied Physics. 119 (2016) 9 - p. , 2016

Link: https://doi.org/10.1063/..

14

Optical properties and Zeeman spectroscopy of niobium in si..:

Gällström, Andreas ; Magnusson, Björn ; Leone, Stefano...
Physical Review B. 92 (2015) 7 - p. , 2015

Link: https://doi.org/10.1103/..

15

Thermochemical Properties of Halides and Halohydrides of Si..:

Sukkaew, Pitsiri ; Ojamäe, Lars ; Kordina, Olof..
ECS Journal of Solid State Science and Technology. 5 (2015) 2 - p. P27-P35 , 2015

Link: https://doi.org/10.1149/..