E-LIB Suche - Ergebnisse für: Krynicki, J.

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Physica status solidi

Volume 109, Number 2: October 16 Physica status solidi ; Volume 109, Number 2, A

Abdellaoui, A ; Agafov, B. L ; Almodovae, N. Suarez... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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EPM 87. Energy Pulse and Particle Beam Modification of Mate..

International Conference held September 7—11, 1987 Dresden,... Physical Research ; 8

Adam, M. ; Ageev, V.P ; Albrecht, O.... - Reprint 2022 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 52, Number 1: March 16 Physica status solidi ; Volume 52, Number 1, A

Abramovskaya, T. A ; Alam, Ashraful ; Alberdi, J. M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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EPM '89: 3rd International Conference on Energy Pulse and P..

Physical Research ; 13

Ageev, V ; Akchulakov, M. T ; Albert, M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

5

Defects in epitaxial Si-doped GaInP:

Krynicki, J. ; Zaidi, M. A. ; Zazoui, M....
Journal of Applied Physics. 74 (1993) 1 - p. 260-266 , 1993

Link: https://doi.org/10.1063/..

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Band offset of GaAs-GaInP heterojunctions:

Feng, S L ; Krynicki, J ; Donchev, V...
Semiconductor Science and Technology. 8 (1993) 12 - p. 2092-2096 , 1993

Link: https://doi.org/10.1088/..

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Electron transport through GaAlAs barriers in GaAs:

Feng, S. L. ; Krynicki, J. ; Zazoui, M....
Journal of Applied Physics. 74 (1993) 1 - p. 341-345 , 1993

Link: https://doi.org/10.1063/..

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Electronic properties of defects created by 1.6 GeV argon i..:

Krynicki, J. ; Toulemonde, M. ; Muller, J.C..
Materials Science and Engineering: B. 2 (1989) 1-3 - p. 105-110 , 1989

Link: https://doi.org/10.1016/..

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Damage related deep electronic levels in silicon irradiated..:

Krynicki, J. ; Toulemonde, M. ; Muller, J. C..
Radiation Effects and Defects in Solids. 110 (1989) 1-2 - p. 203-205 , 1989

Link: https://doi.org/10.1080/..

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Recoil Implantation from Sb Thin Films under Ion Bombardmen:

Paprocki, K. ; Bryłowska, I. ; Andrä, W..
Physica Status Solidi (a). 112 (1989) 1 - p. 301-304 , 1989

Link: https://doi.org/10.1002/..

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Ionization Assisted Transformations of Defects in Carbon Im..:

Krynicki, J. ; Rzewuski, H.
Physica Status Solidi (a). 112 (1989) 1 - p. 405-410 , 1989

Link: https://doi.org/10.1002/..

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AMORPHIZATION OF CD-IMPLANTED GAAS:

, In: EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR,

Krynicki, J. ; Rzewuski, H. ; Groetzschel, R.. - p. 197-199 , 1989

Link: https://doi.org/10.1515/..

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FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LO..:

, In: EPM 87. Energy Pulse and Particle Beam Modification of Materials,

Krynicki, J ; Kozanecki, A. ; Olszewski, A.. - p. 196-199 , 1988

Link: https://doi.org/10.1515/..

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Deep electronic levels in carbon-implanted silicon:

Krynicki, J. ; Rzewuski, H.
Physica Status Solidi (a). 109 (1988) 2 - p. 531-536 , 1988

Link: https://doi.org/10.1002/..

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Study of defects in silicon after low energy H+ implantatio..:

Krynicki, J. ; Muller, J. C. ; Siefert, P...
Physica Status Solidi (a). 100 (1987) 1 - p. 245-249 , 1987

Link: https://doi.org/10.1002/..