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X
Kudryk, Oleksandr V.
31  Ergebnisse:
Personensuche X
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1

2‐ and 3‐Fluorocyclobutane Building Blocks for Organic and ..:

Malashchuk, Andrii ; Demchuk, Oleksandr P. ; Razhyk, Bohdan V....
European Journal of Organic Chemistry.  , 2024
Link: https://doi.org/10.1002/..
 
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2

Expanding the Chemical Space of 1,2-Difunctionalized Cyclob..:

Chernykh, Anton V. ; Kudryk, Oleksandr V. ; Olifir, Oleksandr S....
The Journal of Organic Chemistry.  88 (2023)  5 - p. 3109-3131 , 2023
Link: https://doi.org/10.1021/..
 
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3

Predicting the Stability of Orthoarsenates Lu1–xLnxAsO4, Ln..:

, In: Springer Proceedings in Physics; Nanomaterials and Nanocomposites, Nanostructure Surfaces, and Their Applications,
Get'man, E. I. ; Oleksii, Yu. A. ; Kudryk, O. V... - p. 3-11 , 2021
Link: https://doi.org/10.1007/..
 
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4

Teledentistry and the future of dental practice:

Vandre, R H ; Kudryk, V L
Dentomaxillofacial Radiology.  28 (1999)  1 - p. 60-61 , 1999
Link: https://doi.org/10.1038/..
 
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5

Peculiarities of current transport in boron-doped diamond S..:

Nikolenko, A.S. ; Strelchuk, V.V. ; Kudryk, Y.Y....
Diamond and Related Materials.  143 (2024)  - p. 110897 , 2024
Link: https://doi.org/10.1016/..
 
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6

Current flow through metal shunts in ohmic contacts to n +-..:

Sachenko, A. V. ; Belyaev, A. E. ; Pilipenko, V. A....
Semiconductors.  48 (2014)  4 - p. 492-496 , 2014
Link: https://doi.org/10.1134/..
 
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7

Formation mechanism of contact resistance to III–N heterost..:

Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S....
Semiconductors.  47 (2013)  9 - p. 1180-1184 , 2013
Link: https://doi.org/10.1134/..
 
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8

The mechanism of contact-resistance formation on lapped n-S..:

Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S....
Semiconductors.  47 (2013)  3 - p. 449-454 , 2013
Link: https://doi.org/10.1134/..
 
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9

Temperature dependence of the contact resistance of ohmic c..:

Sachenko, A. V. ; Belyaev, A. E. ; Bobyl, A. V....
Semiconductors.  46 (2012)  3 - p. 334-341 , 2012
Link: https://doi.org/10.1134/..
 
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10

Features of temperature dependence of contact resistivity i..:

Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S....
Journal of Applied Physics.  112 (2012)  6 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Effect of microwave irradiation on the resistance of Au-TiB..:

Belyaev, A. E. ; Sachenko, A. V. ; Boltovets, N. S....
Semiconductors.  46 (2012)  4 - p. 541-544 , 2012
Link: https://doi.org/10.1134/..
 
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12

Temperature dependence of contact resistance for Au-Ti-Pd2S..:

Belyaev, A. E. ; Boltovets, N. S. ; Konakova, R. V....
Semiconductors.  46 (2012)  3 - p. 330-333 , 2012
Link: https://doi.org/10.1134/..
 
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13

The effect of current crowding on the internal quantum effi..:

Kudryk, Ya. Ya. ; Zinovchuk, A. V.
Technical Physics Letters.  38 (2012)  5 - p. 456-459 , 2012
Link: https://doi.org/10.1134/..
 
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14

Mechanism of contact resistance formation in ohmic contacts..:

Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S....
Journal of Applied Physics.  111 (2012)  8 - p. , 2012
Link: https://doi.org/10.1063/..
 
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15

Temperature-dependent efficiency droop in InGaN-based light..:

Kudryk, Ya Ya ; Tkachenko, A K ; Zinovchuk, A V
Semiconductor Science and Technology.  27 (2012)  5 - p. 055013 , 2012
Link: https://doi.org/10.1088/..
 
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