E-LIB Suche - Ergebnisse für: Kuroki, Shin-ichiro

1

Study of interface-trap and near-interface-state distributi..:

Van Cuong, Vuong ; Koyanagi, Kaho ; Meguro, Tatsuya...
Japanese Journal of Applied Physics. 63 (2024) 1 - p. 015503 , 2024

Link: https://doi.org/10.35848..

2

Influence of Gate Depletion Layer Width on Radiation Resist..:

Takeyama, Akinori ; Makino, Takahiro ; Tanaka, Yasunori..
Quantum Beam Science. 7 (2023) 4 - p. 31 , 2023

Link: https://doi.org/10.3390/..

3

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Typ..:

Tsutsumi, Masayuki ; Meguro, Tatsuya ; Takeyama, Akinori...
IEEE Electron Device Letters. 44 (2023) 1 - p. 100-103 , 2023

Link: https://doi.org/10.1109/..

4

Integrated Fabrication Process of Si Microcantilever Using ..:

Aprilia, Lia ; Meguro, Tatsuya ; Nuryadi, Ratno...
Journal of Microelectromechanical Systems. 32 (2023) 3 - p. 290-296 , 2023

Link: https://doi.org/10.1109/..

5

Nanowire single-crystal grain and single grain boundary sil..:

Nguyen, Thi Thuy ; Hirata, Tatsuaki ; Kuroki, Shin-Ichiro
Applied Physics Express. 16 (2023) 2 - p. 025502 , 2023

Link: https://doi.org/10.35848..

6

Flexible and compact perspiration-monitoring system with 0...:

Yamamoto, Ayumu ; Kaga, Yuta ; Aso, Tomohiro...
Japanese Journal of Applied Physics. 62 (2023) SC - p. SC1078 , 2023

Link: https://doi.org/10.35848..

7

Characterization of Continuous-Wave Laser Crystallized Sili..:

Nguyen, Thi Thuy ; Kuroki, Shin-Ichiro
ECS Journal of Solid State Science and Technology. 11 (2022) 5 - p. 055001 , 2022

Link: https://doi.org/10.1149/..

8

Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Ha..:

Van Cuong, Vuong ; Meguro, Tatsuya ; Ishikawa, Seiji...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4194-4199 , 2022

Link: https://doi.org/10.1109/..

9

Observation of Metal-free Phthalocyanine Adsorbed on SiC Re..:

Emoto, Satoru ; Isobe, Asuta ; Ikari, Tomonori...
e-Journal of Surface Science and Nanotechnology. 20 (2022) 4 - p. 257-260 , 2022

Link: https://doi.org/10.1380/..

10

500 °C high-temperature reliability of Ni/Nb ohmic contact ..:

Van Cuong, Vuong ; Sato, Tadashi ; Miyazaki, Takamichi...
Japanese Journal of Applied Physics. 61 (2022) 3 - p. 036501 , 2022

Link: https://doi.org/10.35848..

11

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using D..:

Meguro, Tatsuya ; Takeyama, Akinori ; Ohshima, Takeshi..
IEEE Electron Device Letters. 43 (2022) 10 - p. 1713-1716 , 2022

Link: https://doi.org/10.1109/..

12

Growth of vanadium doped semi-insulating 4H-SiC epilayer wi..:

Kojima, Kazutoshi ; Sato, Shin-ichiro ; Ohshima, Takeshi.
Journal of Applied Physics. 131 (2022) 24 - p. , 2022

Link: https://doi.org/10.1063/..

13

Threshold voltage instability and hysteresis in gamma-rays ..:

Takeyama, Akinori ; Makino, Takahiro ; Tanaka, Yasunori..
Journal of Applied Physics. 131 (2022) 24 - p. , 2022

Link: https://doi.org/10.1063/..

14

Thickness dependencies of SiO2/BaOx layers on interfacial p..:

Muraoka, Kosuke ; Ishikawa, Seiji ; Sezaki, Hiroshi...
Materials Science in Semiconductor Processing. 121 (2021) - p. 105343 , 2021

Link: https://doi.org/10.1016/..

15

High-temperature reliability of integrated circuit based on..:

Van Cuong, Vuong ; Ishikawa, Seiji ; Maeda, Tomonori...
Japanese Journal of Applied Physics. 59 (2020) 12 - p. 126504 , 2020

Link: https://doi.org/10.35848..