E-LIB Suche - Ergebnisse für: Kuryatkov, Vladimir

1

Tunable near-infrared Gires–Tournois resonators based on va..:

Jafari, Ahmad Khayyat ; Gaddy, Matthew ; Ho, Yu-Che...
Optics Letters. 47 (2022) 3 - p. 645 , 2022

Link: https://doi.org/10.1364/..

2

GaN-Based PCSS with High Breakdown Fields:

Gaddy, Matthew ; Kuryatkov, Vladimir ; Wilson, Nicholas...
Electronics. 10 (2021) 13 - p. 1600 , 2021

Link: https://doi.org/10.3390/..

3

Synthesis of New Nitride Alloys with Mg by Plasma‐Assisted ..:

Gherasoiu, Iulian ; Man Yu, Kin ; Ekinci, Huseyin...
physica status solidi (b). 257 (2020) 9 - p. , 2020

Link: https://doi.org/10.1002/..

4

Investigation of GaN Photoconductive Semiconductor Switches:

, In: 2018 IEEE International Conference on Plasma Science (ICOPS),

Wilson, Nicholas A. ; Culpepper, Jared A. ; Kuryatkov, Vladimir... - p. 1-1 , 2018

Link: https://doi.org/10.1109/..

5

Characterization of Si3N4/Si(111) thin films by reflectance..:

Lastras-Martínez, Luis Felipe ; Ulloa-Castillo, Nicolás Antonio ; Herrera-Jasso, Rafael...
Japanese Journal of Applied Physics. 54 (2015) 2 - p. 021501 , 2015

Link: https://doi.org/10.7567/..

6

Tunable dual-band terahertz metamaterial bandpass filters:

Zhu, Yanhan ; Vegesna, Subash ; Zhao, Yong...
Optics Letters. 38 (2013) 14 - p. 2382 , 2013

Link: https://doi.org/10.1364/..

7

Effects of Growth Temperature on Indium Incorporation in In..:

Uddin, Md Rakib ; Pandikunta, Mahesh ; Mansurov, Vladimir...
Journal of Electronic Materials. 41 (2012) 5 - p. 824-829 , 2012

Link: https://doi.org/10.1007/..

8

Terahertz bandpass filters using double-stacked metamateria..:

Zhu, Yanhan ; Vegesna, Subash ; Kuryatkov, Vladimir...
Optics Letters. 37 (2012) 3 - p. 296 , 2012

Link: https://doi.org/10.1364/..

9

Deep UV light emitting diodes grown by gas source molecular..:

Nikishin, Sergey ; Borisov, Boris ; Kuryatkov, Vladimir...
Journal of Materials Science: Materials in Electronics. 19 (2007) 8-9 - p. 764-769 , 2007

Link: https://doi.org/10.1007/..

10

Low-noise GaN Schottky diodes on Si(111) by molecular beam ..:

Deelman, Peter W. ; Bicknell-Tassius, Robert N. ; Nikishin, Sergey..
Applied Physics Letters. 78 (2001) 15 - p. 2172-2174 , 2001

Link: https://doi.org/10.1063/..

11

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and wi..:

Ekinci, Huseyin ; Kuryatkov, Vladimir V. ; Forgey, Chris...
Vacuum. 148 (2018) - p. 168-172 , 2018

Link: https://doi.org/10.1016/..

12

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar C..:

Ekinci, Huseyin ; Kuryatkov, Vladimir V. ; Gherasoiu, Iulian..
Journal of Electronic Materials. 46 (2017) 10 - p. 6078-6083 , 2017

Link: https://doi.org/10.1007/..

13

Plasma Etching of n-Type 4H-SiC for Photoconductive Semicon..:

Ekinci, Huseyin ; Kuryatkov, Vladimir V. ; Mauch, Daniel L...
Journal of Electronic Materials. 44 (2015) 5 - p. 1300-1305 , 2015

Link: https://doi.org/10.1007/..

14

Selective area epitaxy of InGaN quantum well triangular mic..:

Feng, Wen ; Kuryatkov, Vladimir V. ; Nikishin, Sergey A..
Journal of Crystal Growth. 312 (2010) 10 - p. 1717-1720 , 2010

Link: https://doi.org/10.1016/..

15

Diverse facets of InGaN quantum well microrings grown by se..:

Feng, Wen ; Kuryatkov, Vladimir V. ; Rosenbladt, Dana M....
Journal of Applied Physics. 105 (2009) 12 - p. , 2009

Link: https://doi.org/10.1063/..