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Kutsuki, Katsuhiro
27  Ergebnisse:
Personensuche X
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1

Generation of single photon emitters at a SiO2/SiC interfac..:

Onishi, Kentaro ; Nakanuma, Takato ; Tahara, Kosuke...
Applied Physics Express.  17 (2024)  5 - p. 051004 , 2024
Link: https://doi.org/10.35848..
 
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2

Control on the density and optical properties of color cent..:

Nakanuma, Takato ; Tahara, Kosuke ; Kutsuki, Katsuhiro...
Applied Physics Letters.  123 (2023)  10 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

Mobility enhancement by mechanical uniaxial stress on 4H-Si..:

Takeuchi, Wakana ; Kutsuki, Katsuhiro ; Kagoshima, Eiji...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGD08 , 2020
Link: https://doi.org/10.35848..
 
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4

An extraction method of channel resistance for analysis of ..:

Kutsuki, Katsuhiro ; Kagoshima, Eiji ; Onishi, Toru...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGD04 , 2020
Link: https://doi.org/10.7567/..
 
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5

Determination of Zn-containing sites inβ-Ga2O3film grown th..:

Isomura, Noritake ; Nagaoka, Tatsuji ; Watanabe, Yukihiko...
Japanese Journal of Applied Physics.  59 (2020)  7 - p. 070909 , 2020
Link: https://doi.org/10.35848..
 
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6

X-ray imaging and spectroscopy of nitrogen in the SiO2/SiC ..:

Isomura, Noritake ; Kitazumi, Kousuke ; Kataoka, Keita..
Applied Physics Express.  13 (2020)  7 - p. 071005 , 2020
Link: https://doi.org/10.35848..
 
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7

Experimental investigation and modeling of inversion carrie..:

Kutsuki, Katsuhiro ; Watanabe, Yukihiko ; Yamashita, Yusuke...
Solid-State Electronics.  157 (2019)  - p. 12-19 , 2019
Link: https://doi.org/10.1016/..
 
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8

Effect of surface roughness of trench sidewalls on electric..:

Kutsuki, Katsuhiro ; Murakami, Yuki ; Watanabe, Yukihiko...
Japanese Journal of Applied Physics.  57 (2018)  4S - p. 04FR02 , 2018
Link: https://doi.org/10.7567/..
 
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9

Impact of optical phonon scattering on inversion channel mo..:

Kutsuki, Katsuhiro ; Kawaji, Sachiko ; Watanabe, Yukihiko...
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CR03 , 2017
Link: https://doi.org/10.7567/..
 
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10

Impact of Al Doping Concentration at Channel Region on Mobi..:

Kutsuki, Katsuhiro ; Kawaji, Sachiko ; Watanabe, Yukihiko...
Materials Science Forum.  858 (2016)  - p. 607-610 , 2016
Link: https://doi.org/10.4028/..
 
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11

Improved Evaluation Method for Channel Mobility in SiC Tren..:

Kutsuki, Katsuhiro ; Kawaji, Sachiko ; Watanabe, Yukihiko..
Materials Science Forum.  821-823 (2015)  - p. 757-760 , 2015
Link: https://doi.org/10.4028/..
 
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12

Reliability Evaluation of Al2O3 Deposited by Ozone-Based At..:

Kikuta, Daigo ; Narita, Tetsuo ; Kutsuki, Katsuhiro..
Japanese Journal of Applied Physics.  52 (2013)  8S - p. 08JN19 , 2013
Link: https://doi.org/10.7567/..
 
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13

Gate stack technology for advanced high-mobility Ge-channel..:

Watanabe, Heiji ; Kutsuki, Katsuhiro ; Kasuya, Atsushi...
Current Applied Physics.  12 (2012)  - p. S10-S19 , 2012
Link: https://doi.org/10.1016/..
 
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14

Insight into unusual impurity absorbability of GeO2 in GeO2..:

Ogawa, Shingo ; Suda, Taichi ; Yamamoto, Takashi...
Applied Physics Letters.  99 (2011)  14 - p. , 2011
Link: https://doi.org/10.1063/..
 
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15

Synchrotron Radiation Photoemission Study of Ge3N4/Ge Struc..:

Hosoi, Takuji ; Kutsuki, Katsuhiro ; Okamoto, Gaku...
Japanese Journal of Applied Physics.  50 (2011)  10S - p. 10PE03 , 2011
Link: https://doi.org/10.1143/..
 
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