E-LIB Suche - Ergebnisse für: Kwa, Kelvin S. K.

1

Effect of deposition conditions and post deposition anneal ..:

Ponon, Nikhil K. ; Appleby, Daniel J.R. ; Arac, Erhan...
Thin Solid Films. 578 (2015) - p. 31-37 , 2015

Link: https://doi.org/10.1016/..

2

Ferroelectric properties in thin film barium titanate grown..:

Appleby, Daniel J. R. ; Ponon, Nikhil K. ; Kwa, Kelvin S. K....
Journal of Applied Physics. 116 (2014) 12 - p. , 2014

Link: https://doi.org/10.1063/..

3

Experimental Observation of Negative Capacitance in Ferroel..:

Appleby, Daniel J. R. ; Ponon, Nikhil K. ; Kwa, Kelvin S. K....
Nano Letters. 14 (2014) 7 - p. 3864-3868 , 2014

Link: https://doi.org/10.1021/..

4

A comprehensive study on the leakage current mechanisms of ..:

Mojarad, Shahin A. ; Kwa, Kelvin S. K. ; Goss, Jonathan P....
Journal of Applied Physics. 111 (2012) 1 - p. , 2012

Link: https://doi.org/10.1063/..

5

Leakage current asymmetry and resistive switching behavior ..:

Mojarad, Shahin A. ; Goss, Jonathan P. ; Kwa, Kelvin S. K....
Applied Physics Letters. 101 (2012) 17 - p. , 2012

Link: https://doi.org/10.1063/..

6

Top-down fabrication of single crystal silicon nanowire usi..:

Za'bah, Nor F. ; Kwa, Kelvin S. K. ; Bowen, Leon..
Journal of Applied Physics. 112 (2012) 2 - p. , 2012

Link: https://doi.org/10.1063/..

7

Anomalous resistive switching phenomenon:

Mojarad, Shahin A. ; Goss, J. P. ; Kwa, Kelvin S. K....
Journal of Applied Physics. 112 (2012) 12 - p. , 2012

Link: https://doi.org/10.1063/..

8

Doubling speed using strained Si/SiGe CMOS technology:

Olsen, Sarah H. ; Temple, Matthew ; O'Neill, Anthony G....
Thin Solid Films. 508 (2006) 1-2 - p. 338-341 , 2006

Link: https://doi.org/10.1016/..

9

Improving metal/semiconductor conductivity using AlOx inter..:

King, P. J. ; Arac, E. ; Ganti, S....
Applied Physics Letters. 105 (2014) 5 - p. , 2014

Link: https://doi.org/10.1063/..

10

The impact of self-heating and SiGe strain-relaxed buffer t..:

Alatise, O.M. ; Kwa, K.S.K. ; Olsen, S.H..
Solid-State Electronics. 54 (2010) 3 - p. 327-335 , 2010

Link: https://doi.org/10.1016/..

11

Extraction of strained-Si metal-oxide-semiconductor field-e..:

Dalapati, G. K. ; Chattopadhyay, S. ; Driscoll, L. S....
Journal of Applied Physics. 99 (2006) 3 - p. , 2006

Link: https://doi.org/10.1063/..

12

Study of strain relaxation in Si/SiGe metal-oxide-semicondu..:

Olsen, S. H. ; O'Neill, A. G. ; Dobrosz, P....
Journal of Applied Physics. 97 (2005) 11 - p. , 2005

Link: https://doi.org/10.1063/..

13

Evaluation of strained Si/SiGe material for high performanc..:

Olsen, S H ; O'Neill, A G ; Chattopadhyay, S...
Semiconductor Science and Technology. 19 (2004) 6 - p. 707-714 , 2004

Link: https://doi.org/10.1088/..

14

Thermal oxidation of strained Si/SiGe: impact of surface mo..:

Olsen, S.H ; O'Neill, A.G ; Norris, D.J...
Materials Science and Engineering: B. 109 (2004) 1-3 - p. 78-84 , 2004

Link: https://doi.org/10.1016/..

15

Strained Si MOSFETs on relaxed SiGe platforms: performance ..:

Chattopadhyay, S. ; Driscoll, L.D. ; Kwa, K.S.K...
Solid-State Electronics. 48 (2004) 8 - p. 1407-1416 , 2004

Link: https://doi.org/10.1016/..