Lander, R. J. P.
1478  Ergebnisse:
Personensuche X
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2

Improved effective mobility extraction in MOSFETs:

Thomas, S.M. ; Whall, T.E. ; Parker, E.H.C....
Solid-State Electronics.  53 (2009)  12 - p. 1252-1256 , 2009
 
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3

Performance improvement in narrow MuGFETs by gate work func..:

Ferain, I. ; Duffy, R. ; Collaert, N....
Solid-State Electronics.  53 (2009)  7 - p. 760-766 , 2009
 
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4

Gatestacks for scalable high-performance FinFETs:

, In: 2007 IEEE International Electron Devices Meeting,
Vellianitis, G. ; Petry, J. ; Pawlak, B.J.... - p. None , 2007
 
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5

Performance improvement of self-aligned HfO2/TaN and SiON/T..:

Schram, T. ; Ragnarsson, L.-Å ; Lujan, G....
Microelectronics Reliability.  45 (2005)  5-6 - p. 779-782 , 2005
 
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8

On the low-temperature mobility of holes in gated oxide Si/..:

Lander, R J P ; Kearney, M J ; Horrell, A I...
Semiconductor Science and Technology.  12 (1997)  9 - p. 1064-1071 , 1997
 
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11

A search for selectrons and squarks at HERA:

H1 Collaboration ; Aid, S ; Baranov, P...
info:eu-repo/semantics/altIdentifier/wos/WOS:A1996UX63900033.  , 1996
 
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12

Measurement of the Q2 dependence of the charged and neutral..:

H1 Collaboration ; Aid, S ; Baranov, P...
info:eu-repo/semantics/altIdentifier/doi/10.1016/0370-2693(96)00545-X.  , 1996
 
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13

Energy flow and charged particle spectra in deep inelastic ..:

Abt, I ; Ahmed, T ; Baranov, P...
info:eu-repo/semantics/altIdentifier/doi/10.3204/PUBDB-2023-00529.  , 1994
 
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