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Lasse Vines
179  Ergebnisse:
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1

Dual configuration of shallow acceptor levels in 4H-SiC:

Bathen, Marianne Etzelmüller ; Kumar, Piyush ; Ghezellou, Misagh...
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108360 , 2024
Link: https://doi.org/10.1016/..
 
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2

Impact of carbon injection in 4H-SiC on defect formation an..:

Bathen, Marianne Etzelmüller ; Karsthof, Robert ; Galeckas, Augustinas...
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108316 , 2024
Link: https://doi.org/10.1016/..
 
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3

Formation and stability of point defect color centers in 6H..:

Lemva Ousdal, Erlend ; Etzelmüller Bathen, Marianne ; Galeckas, Augustinas..
Journal of Applied Physics.  135 (2024)  22 - p. , 2024
Link: https://doi.org/10.1063/..
 
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4

Carrier Lifetime Dependence on Temperature and Proton Irrad..:

Sozzi, Giovanna ; Sapienza, Sergio ; Chiorboli, Giovanni...
IEEE Access.  12 (2024)  - p. 74230-74238 , 2024
Link: https://doi.org/10.1109/..
 
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5

Perspective on electrically active defects in β-Ga2O3 from ..:

Langørgen, Amanda ; Vines, Lasse ; Kalmann Frodason, Ymir
Journal of Applied Physics.  135 (2024)  19 - p. , 2024
Link: https://doi.org/10.1063/..
 
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6

Hydrogen depth profiling and multi-energy proton implantati..:

Samperi, Orazio ; Vines, Lasse ; Bertolini, Mario Pietro...
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108219 , 2024
Link: https://doi.org/10.1016/..
 
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7

Characteristics of ZnON films and heterojunction diodes wit..:

Saxegaard, Kjetil Karlsen ; Monakhov, Eduard ; Vines, Lasse.
Thin Solid Films.  782 (2023)  - p. 139968 , 2023
Link: https://doi.org/10.1016/..
 
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8

Universal radiation tolerant semiconductor:

Azarov, Alexander ; Fernández, Javier García ; Zhao, Junlei...
Nature Communications.  14 (2023)  1 - p. , 2023
Link: https://doi.org/10.1038/..
 
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9

Thermal Stability of Schottky Contacts and Rearrangement of..:

Seyidov, Palvan ; Varley, Joel B. ; Frodason, Ymir Kalmann...
Advanced Electronic Materials.  , 2023
Link: https://doi.org/10.1002/..
 
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10

Trap-limited diffusion of Zn in β−Ga2O3:

Hommedal, Ylva K. ; Frodason, Ymir K. ; Vines, Lasse.
Physical Review Materials.  7 (2023)  3 - p. , 2023
Link: https://doi.org/10.1103/..
 
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11

Properties of Donor Qubits in ZnO Formed by Indium-Ion Impl..:

Wang, Xingyi ; Zimmermann, Christian ; Titze, Michael...
Physical Review Applied.  19 (2023)  5 - p. , 2023
Link: https://doi.org/10.1103/..
 
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12

Defect level in κ-Ga2O3 revealed by thermal admittance spec..:

Langørgen, Amanda ; Kalmann Frodason, Ymir ; Karsthof, Robert...
Journal of Applied Physics.  134 (2023)  1 - p. , 2023
Link: https://doi.org/10.1063/..
 
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13

Charge State Control over Point Defects in Sic Devices:

Bathen, Marianne Etzelmüller ; Selnesaunet, Gard M. ; Enga, Marius Johan...
Defect and Diffusion Forum.  425 (2023)  - p. 35-42 , 2023
Link: https://doi.org/10.4028/..
 
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14

Gettering in PolySi/SiOx Passivating Contacts Enables Si-Ba..:

Assar, Alireza ; Martinho, Filipe ; Larsen, Jes...
ACS Applied Materials & Interfaces.  14 (2022)  12 - p. 14342-14358 , 2022
Link: https://doi.org/10.1021/..
 
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15

Predicting solid state material platforms for quantum techn..:

Hebnes, Oliver Lerstøl ; Bathen, Marianne Etzelmüller ; Schøyen, Øyvind Sigmundson...
npj Computational Materials.  8 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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