E-LIB Suche - Ergebnisse für: Lavrent'eva, L. G.

1

Excess arsenic and point defects in GaAS grown by molecular..:

Lavrent'eva, L. G. ; Vilisova, M. D. ; Bobrovnikova, I. A....
Journal of Structural Chemistry. 45 (2004) S1 - p. S88-S95 , 2004

Link: https://doi.org/10.1007/..

2

Effect of growth conditions on incorporation of Si into Ga ..:

Bobrovnikova, I. A. ; Vilisova, M. D. ; Ivonin, I. V....
Semiconductors. 37 (2003) 9 - p. 1047-1052 , 2003

Link: https://doi.org/10.1134/..

3

Doping of GaAs layers with Si under conditions of low-tempe..:

Vilisova, M. D. ; Kunitsyn, A. E. ; Lavrent'eva, L. G....
Semiconductors. 36 (2002) 9 - p. 953-957 , 2002

Link: https://doi.org/10.1134/..

4

Low-temperature molecular beam epitaxy of GaAs: Influence o..:

Lavrent'eva, L. G. ; Vilisova, M. D. ; Preobrazhenskii, V. V..
Crystallography Reports. 47 (2002) S1 - p. S118-S127 , 2002

Link: https://doi.org/10.1134/..

5

Formation of a transition layer during heteroepitaxy of III..:

Vilisova, M. D. ; Ivonin, I. V. ; Korableva, T. V....
Russian Physics Journal. 42 (1999) 1 - p. 17-21 , 1999

Link: https://doi.org/10.1007/..

6

Physics of complex semiconductor crystals and their structu..:

Brudnyi, V. N. ; Voevodina, O. V. ; Voevodin, V. G....
Russian Physics Journal. 41 (1998) 8 - p. 754-767 , 1998

Link: https://doi.org/10.1007/..

7

Structure and properties of epitaxial GaAs and InGaAs films..:

Bobrovnikova, I. A. ; Veinger, A. I. ; Vilisova, M. D....
Russian Physics Journal. 41 (1998) 9 - p. 885-893 , 1998

Link: https://doi.org/10.1007/..

8

Initial stages in the growth and development of junctions i..:

Ivonin, I. V. ; Lavrent'eva, L. G. ; Lukash, V. S....
Russian Physics Journal. 39 (1996) 6 - p. 571-575 , 1996

Link: https://doi.org/10.1007/..

9

Electrophysical properties of epitaxial gallium arsenide do..:

Vilisova, M. D. ; Kataev, Yu. G. ; Chernov, N. A....
Russian Physics Journal. 38 (1995) 2 - p. 147-150 , 1995

Link: https://doi.org/10.1007/..

10

Role of the substrate in the formation of structure defects..:

Ivonin, I. V. ; Krivolapov, N. N. ; Lavrent'eva, L. G..
Soviet Physics Journal. 35 (1992) 1 - p. 51-52 , 1992

Link: https://doi.org/10.1007/..

11

Use of ab etchant for clarifying the structural-impurity in..:

Ivonin, I. V. ; Karimova, N. Ya. ; Krivolapov, N. N..
Russian Physics Journal. 35 (1992) 5 - p. 487-489 , 1992

Link: https://doi.org/10.1007/..

12

Doping and impurity-vacancy complex formation during vapour..:

Bobrovnikova, I.A. ; Lavrent'eva, L.G. ; Rusaikin, M.P..
Journal of Crystal Growth. 123 (1992) 3-4 - p. 529-536 , 1992

Link: https://doi.org/10.1016/..

13

Growth and impurity-trapping kinetics in sulfur-doped galli..:

Vilisova, M. D. ; Lavrent'eva, L. G. ; Porokhovnichenko, L. P..
Soviet Physics Journal. 31 (1988) 1 - p. 62-66 , 1988

Link: https://doi.org/10.1007/..

14

Influence of the AsH3 inlet pressure on the growth of epita..:

Aleksandrova, G. A. ; Ivonin, I. V. ; Lavrent'eva, L. G...
Soviet Physics Journal. 31 (1988) 9 - p. 759-763 , 1988

Link: https://doi.org/10.1007/..

15

Formation of centers with deep levels in gaseous phase epit..:

Lavrent'eva, L. G. ; Vilisova, M. D.
Soviet Physics Journal. 29 (1986) 5 - p. 339-347 , 1986

Link: https://doi.org/10.1007/..