E-LIB Suche - Ergebnisse für: Leal, Ronan

1

Maskless and contactless patterned silicon deposition using..:

Leal, Ronan ; Bruneau, Bastien ; Bulkin, Pavel...
Plasma Sources Science and Technology. 29 (2020) 2 - p. 025023 , 2020

Link: https://doi.org/10.1088/..

2

Growth of Tetragonal Si via Plasma-Enhanced Epitaxy:

Chen, Wanghua ; Hamon, Gwenaëlle ; Léal, Ronan...
Crystal Growth & Design. 17 (2017) 8 - p. 4265-4269 , 2017

Link: https://doi.org/10.1021/..

3

Influence of deposition rate on the structural properties o..:

Chen, Wanghua ; Cariou, Romain ; Hamon, Gwenaëlle...
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

4

High quality boron-doped epitaxial layers grown at 200°C fr..:

Léal, Ronan ; Haddad, Farah ; Poulain, Gilles..
AIP Advances. 7 (2017) 2 - p. 025006 , 2017

Link: https://doi.org/10.1063/..

5

Maskless and contactless patterned silicon deposition using..:

Leal, Ronan ; Bruneau, Bastien ; Bulkin, Pavel...
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6595/ab5e2c. , 2020

Link: https://hal.science/hal-..

6

Maskless and contactless patterned silicon deposition using..:

Leal, Ronan ; Bruneau, Bastien ; Bulkin, Pavel...
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6595/ab5e2c. , 2020

Link: https://hal.science/hal-..

7

Maskless and contactless patterned silicon deposition using..:

Leal, Ronan ; Bruneau, Bastien ; Bulkin, Pavel...
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6595/ab5e2c. , 2020

Link: https://hal.science/hal-..

8

Epitaxial growth of silicon by PECVD from SiF4/H2/Ar gas mi..:

Leal, Ronan
http://www.theses.fr/2017SACLX038/document. , 2017

Link: http://www.theses.fr/201..

9

Epitaxial growth of silicon by PECVD from SiF4/H2/Ar gas mi..:

Leal, Ronan
NNT: 2017SACLX038. , 2017

Link: https://theses.hal.scien..

10

Epitaxial growth of silicon by PECVD from SiF4/H2/Ar gas mi..:

Leal, Ronan
NNT: 2017SACLX038. , 2017

Link: https://theses.hal.scien..

11

Influence of deposition rate on the structural properties o..:

Chen, Wanghua ; Cariou, Romain ; Hamon, Gwenaëlle...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5338295/. , 2017

Link: http://www.ncbi.nlm.nih...

12

Epitaxial growth of silicon by PECVD from SiF4/H2/Ar gas mi..:

Leal, Ronan
NNT: 2017SACLX038. , 2017

Link: https://theses.hal.scien..

13

High quality boron-doped epitaxial layers grown at 200°C fr..:

Ronan Léal ; Farah Haddad ; Gilles Poulain..
http://dx.doi.org/10.1063/1.4976685. , 2017

Link: https://doi.org/10.1063/..

14

Construction of Chromosome Segment Substitution Lines in Pe..:

Fonceka, Daniel ; Tossim, Hodo-Abalo ; Rivallan, Ronan...
PLoS ONE. 7 (2012) 11 - p. e48642 , 2012

Link: https://doi.org/10.1371/..

15

Potassium adsorption on substrates formulated with vermicul..:

Leal, Bruno de Paula ; Thebaldi, Michael Silveira ; Silva, Yasmin Fernandes...
Revista Engenharia na Agricultura - REVENG. 31 (2023) Contínua - p. 51-63 , 2023

Link: https://doi.org/10.13083..