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Lee, Seonhaeng
15  Ergebnisse:
Personensuche X
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1

Current-Voltage Modeling of DRAM Cell Transistor Using Gene..:

Park, Jun Hui ; Kim, Jung Nam ; Lee, Seonhaeng...
IEEE Access.  12 (2024)  - p. 23881-23886 , 2024
Link: https://doi.org/10.1109/..
 
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2

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Ch..:

You, Hyunseo ; Nam, Kihoon ; An, Jehyun...
IEEE Access.  12 (2024)  - p. 10988-10994 , 2024
Link: https://doi.org/10.1109/..
 
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3

Forward Body Bias Technique in DRAM Peripheral Transistor a..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
You, Hyunseo ; An, Jehyun ; Nam, Kihoon... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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4

Bidirectional Precharge and Negative Bias Scheme for Progra..:

Nam, Kihoon ; Park, Chanyang ; Kim, Donghyun...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6313-6317 , 2023
Link: https://doi.org/10.1109/..
 
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5

Improved electrical characteristics and reliability of p-MO..:

Lee, Seonhaeng ; Yoo, Keon ; Ryu, Youngmi...
Solid-State Electronics.  167 (2020)  - p. 107783 , 2020
Link: https://doi.org/10.1016/..
 
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6

Saturation of threshold-voltage shift during positive bias ..:

Kim, Cheolgyu ; Kim, Hyeokjin ; Lee, Seonhaeng..
Japanese Journal of Applied Physics.  53 (2014)  8S1 - p. 08LA02 , 2014
Link: https://doi.org/10.7567/..
 
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7

Effect of negative bias temperature instability induced by ..:

Lee, Seonhaeng ; Kim, Cheolgyu ; Kim, Hyeokjin...
Microelectronics Reliability.  53 (2013)  9-11 - p. 1351-1354 , 2013
Link: https://doi.org/10.1016/..
 
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8

Effect of electron–electron scattering at an elevated tempe..:

Lee, Seonhaeng ; Kim, Dongwoo ; Kim, Cheolgyu...
Microelectronics Reliability.  52 (2012)  9-10 - p. 1905-1908 , 2012
Link: https://doi.org/10.1016/..
 
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9

Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degr..:

Kim, Dongwoo ; Lee, Seonhaeng ; Kim, Cheolgyu..
Japanese Journal of Applied Physics.  51 (2012)  2S - p. 02BC10 , 2012
Link: https://doi.org/10.1143/..
 
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10

Effect of La2O3Capping Layer Thickness on Hot-Carrier Degra..:

Kim, Dongwoo ; Lee, Seonhaeng ; Kim, Cheolgyu..
Japanese Journal of Applied Physics.  51 (2012)  2S - p. 02BC10 , 2012
Link: https://doi.org/10.7567/..
 
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11

Measurement of mechanical stresses induced by hybrid shallo..:

Lee, Seonhaeng ; Kim, Dongwoo ; Kim, Cheolgyu...
Microelectronic Engineering.  91 (2012)  - p. 44-49 , 2012
Link: https://doi.org/10.1016/..
 
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12

Enhanced degradation of n-MOSFETs with high-k/metal gate st..:

Kim, Dongwoo ; Lee, Seonhaeng ; Kim, Cheolgyu...
Microelectronics Reliability.  52 (2012)  9-10 - p. 1901-1904 , 2012
Link: https://doi.org/10.1016/..
 
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13

Channel width dependence of mechanical stress effects induc..:

Lee, Seonhaeng ; Kim, Dongwoo ; Kim, Cheolgyu...
Microelectronics Reliability.  52 (2012)  9-10 - p. 1949-1952 , 2012
Link: https://doi.org/10.1016/..
 
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14

Influence of dummy active patterns on mechanical stress ind..:

Kim, Dongwoo ; Lee, Seonhaeng ; Oh, T.K....
Microelectronic Engineering.  88 (2011)  6 - p. 882-887 , 2011
Link: https://doi.org/10.1016/..
 
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15

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Ch..:

Hyunseo You ; Kihoon Nam ; Jehyun An...
https://ieeexplore.ieee.org/document/10398173/.  , 2024
Link: https://doi.org/10.1109/..
 
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