E-LIB Suche - Ergebnisse für: Lerch, W.

1

Low-temperature monitoring with implantation and alloying:

Ende, L. ; Grund, M. ; Schwarz, U....
MRS Advances. 7 (2023) 36 - p. 1525-1529 , 2023

Link: https://doi.org/10.1557/..

2

High-K metal gate stacks with ultra-thin interfacial layers..:

Czernohorsky, M. ; Seidel, K. ; Kühnel, K....
Microelectronic Engineering. 178 (2017) - p. 262-265 , 2017

Link: https://doi.org/10.1016/..

3

Heat pump condenser and desuperheater integrated into a sto..:

Heinz, A. ; Lerch, W. ; Heimrath, R.
Applied Thermal Engineering. 102 (2016) - p. 465-475 , 2016

Link: https://doi.org/10.1016/..

4

Direct use of solar energy as heat source for a heat pump i..:

Lerch, W. ; Heinz, A. ; Heimrath, R.
Energy and Buildings. 100 (2015) - p. 34-42 , 2015

Link: https://doi.org/10.1016/..

5

(Invited) Scaling Requires Continuous Innovation in Thermal..:

Lerch, W. ; Kegel, W. ; Niess, J....
ECS Transactions. 45 (2012) 6 - p. 151-161 , 2012

Link: https://doi.org/10.1149/..

6

An X-ray photoelectron spectroscopy study of ultra-thin oxy..:

Ladas, S. ; Sygellou, L. ; Kennou, S....
Thin Solid Films. 520 (2011) 2 - p. 871-875 , 2011

Link: https://doi.org/10.1016/..

7

Temperature Measurement in Rapid Thermal Processing with Fo..:

Reichel, D. ; Skorupa, W. ; Lerch, W..
Critical Reviews in Solid State and Materials Sciences. 36 (2011) 2 - p. 102-128 , 2011

Link: https://doi.org/10.1080/..

8

Effect of Germanium content and strain on the formation of ..:

Fazzini, P.F. ; Cristiano, F. ; Talbot, E....
Thin Solid Films. 518 (2010) 9 - p. 2338-2341 , 2010

Link: https://doi.org/10.1016/..

9

Modeling of the effect of the buried Si–SiO2 interface on t..:

Bazizi, E. M. ; Fazzini, P. F. ; Pakfar, A....
Journal of Applied Physics. 107 (2010) 7 - p. , 2010

Link: https://doi.org/10.1063/..

10

Composition dependence of Si and Ge diffusion in relaxed Si..:

Kube, R. ; Bracht, H. ; Hansen, J. Lundsgaard...
Journal of Applied Physics. 107 (2010) 7 - p. , 2010

Link: https://doi.org/10.1063/..

11

Low-temperature processing of semiconductor surfaces by use..:

Lerch, W ; Gschwandtner, A ; Schneider, S...
Semiconductor Science and Technology. 24 (2009) 5 - p. 052001 , 2009

Link: https://doi.org/10.1088/..

12

Advanced activation trends for boron and arsenic by combina..:

Lerch, W. ; Paul, S. ; Niess, J....
Materials Science and Engineering: B. 154-155 (2008) - p. 3-13 , 2008

Link: https://doi.org/10.1016/..

13

Evidence of the carrier mobility degradation in highly B-do..:

Séverac, F. ; Cristiano, F. ; Bedel-Pereira, E....
Materials Science and Engineering: B. 154-155 (2008) - p. 225-228 , 2008

Link: https://doi.org/10.1016/..

14

Simultaneous diffusion of Si and Ge in isotopically control..:

Kube, R. ; Bracht, H. ; Lundsgaard Hansen, J....
Materials Science in Semiconductor Processing. 11 (2008) 5-6 - p. 378-383 , 2008

Link: https://doi.org/10.1016/..

15

On a computationally efficient approach to boron-interstiti..:

Schermer, J. ; Martinez-Limia, A. ; Pichler, P....
Solid-State Electronics. 52 (2008) 9 - p. 1424-1429 , 2008

Link: https://doi.org/10.1016/..