Leurquin, C.
8  Ergebnisse:
Personensuche X
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1

Toward the Understanding on Threshold Voltage Drift Mechani..:

Leurquin, C. ; Vandendaele, W. ; Jaud, M.-A....
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3123-3129 , 2024
 
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2

Drain voltage impact on charge redistribution in GaN-on-Si ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Leurquin, C. ; Vandendaele, W. ; Gwoziecki, R.... - p. 1-6 , 2023
 
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3

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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4

Deep Insights into Recessed Gate MOS-HEMT Technology for Po..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mohamad, B. ; Royer, C. Le ; Rigaud-Minet, F.... - p. 1-3 , 2023
 
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6

Influence of imidazole replacement in different structural ..:

Meier, Galina ; Apelt, Joachim ; Reichert, Ulrich...
European Journal of Pharmaceutical Sciences.  13 (2001)  3 - p. 249-259 , 2001
 
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8

Epidemiologie van prenatale diagnostiek en selectieve zwang..:

Cornel, M. C ; Leurquin, P ; de Walle, H. E.K..
https://research.rug.nl/en/publications/1dd5b936-3ad8-498f-a0c6-7b636d1f9456.  , 1997
 
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