Leycuras, A.
72  Ergebnisse:
Personensuche X
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1

Fabrication of monocrystalline 3C–SiC resonators for MHz fr..:

Placidi, M. ; Godignon, P. ; Mestres, N....
Sensors and Actuators B: Chemical.  133 (2008)  1 - p. 276-280 , 2008
 
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7

Control of 3C-SiC/Si wafer bending by the "checker-board" c..:

Chassagne, T. ; Ferro, G. ; Haas, H....
physica status solidi (a).  202 (2005)  4 - p. 524-530 , 2005
 
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8

Behaviour of the 3C–SiC(100) c(2 × 2) (C‐terminated) and 3 ..:

Portail, M. ; Saada, S. ; Delclos, S....
physica status solidi (a).  202 (2005)  11 - p. 2234-2239 , 2005
 
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10

In situ optical monitoring of metalorganic vapor phase epit..:

Rebey, A. ; El Jani, B. ; Leycuras, A...
Applied Physics A: Materials Science & Processing.  68 (1999)  3 - p. 349-352 , 1999
 
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11

Optical investigation of thick 3CSiC layers deposited on b..:

Bluet, J.M. ; Camassel, J. ; Falkovsky, L.A..
Diamond and Related Materials.  6 (1997)  10 - p. 1385-1387 , 1997
 
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12

Role of oxygen in the formation of voids at the SiC–Si inte..:

Leycuras, A.
Applied Physics Letters.  70 (1997)  12 - p. 1533-1535 , 1997
 
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