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Lianzhang Lai
5  Ergebnisse:
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1

CONSTRAINTS AND RESOLUTION FOR PHASE CHANGE MATERIALS AND M..:

YANG, HONG ; YINYIN, LIN ; YUN, LING...
Integrated Ferroelectrics.  78 (2006)  1 - p. 153-163 , 2006
Link: https://doi.org/10.1080/..
 
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2

A novel edge contact type cell for phase change RAM using N..:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,
Yun Ling ; Yinyin Lin ; Lianzhang Lai... - p. 707,708,709,710 , 2004
Link: https://doi.org/10.1109/..
 
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3

A DESIGN OF FERRO-DFF FOR NONVOLATILE SYSTEMS:

YAN, JIEFENG ; LAI, LIANZHANG ; BINGHANG, L V.
Integrated Ferroelectrics.  81 (2006)  1 - p. 207-215 , 2006
Link: https://doi.org/10.1080/..
 
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4

THE PERFORMANCE OF Ge2Sb2Te5 MATERIAL FOR PCRAM DEVICE:

LING, YUN ; LIN, YINYIN ; LAI, LIANZHANG...
Integrated Ferroelectrics.  78 (2006)  1 - p. 261-270 , 2006
Link: https://doi.org/10.1080/..
 
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5

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory:

Lai, Yunfeng ; Qiao, Baowei ; Feng, Jie...
Journal of Electronic Materials.  34 (2005)  2 - p. 176-181 , 2005
Link: https://doi.org/10.1007/..
 
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