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Liddy, Kyle J.
25  Ergebnisse:
Personensuche X
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1

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes:

Hendricks, Nolan S. ; Islam, Ahmad E. ; Sowers, Elizabeth A....
Journal of Applied Physics.  135 (2024)  9 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Effect of High Temperature on the Performance of AlGaN/GaN ..:

Islam, Ahmad E. ; Sepelak, Nicholas P. ; Miesle, Adam T....
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1805-1811 , 2024
Link: https://doi.org/10.1109/..
 
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3

Vertical metal-dielectric-semiconductor diode on (001) β-Ga..:

Hendricks, Nolan S ; Farzana, Esmat ; Islam, Ahmad...
Applied Physics Express.  , 2023
Link: https://doi.org/10.35848..
 
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4

High-Temperature Electronics Using $\beta{-}$ Ga203 FETs an..:

, In: NAECON 2023 - IEEE National Aerospace and Electronics Conference,
Islam, Ahmad E. ; Grupen, Matt ; Hughes, Gary... - p. 263-268 , 2023
Link: https://doi.org/10.1109/..
 
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5

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-..:

Miller, Nicholas C. ; Brown, Alexis ; Elliott, Michael...
IEEE Journal of the Electron Devices Society.  11 (2023)  - p. 531-538 , 2023
Link: https://doi.org/10.1109/..
 
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6

Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Do..:

Kim, Samuel H. ; Shoemaker, Daniel ; Green, Andrew J....
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1628-1635 , 2023
Link: https://doi.org/10.1109/..
 
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7

Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard..:

, In: 2023 Device Research Conference (DRC),
Williams, Jeremiah ; Hendricks, Nolan ; Wang, Weisong... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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8

Accurate non-linear harmonic simulations at X-band using th..:

, In: 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR),
Miller, Nicholas C. ; Davis, Devin T. ; Khandelwal, Sourabh... - p. 11-13 , 2022
Link: https://doi.org/10.1109/..
 
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9

First Demonstration of 500 °C Operation of β-Ga2O3 MOSFET i..:

, In: 2022 Compound Semiconductor Week (CSW),
Sepelak, Nicholas P. ; Williams, Jeremiah ; Dryden, Daniel M.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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10

500 °C operation of β-Ga2O3 field-effect transistors:

Islam, Ahmad E. ; Sepelak, Nicholas P. ; Liddy, Kyle J....
Applied Physics Letters.  121 (2022)  24 - p. , 2022
Link: https://doi.org/10.1063/..
 
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11

Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs:

Kim, Samuel H. ; Shoemaker, Daniel ; Chatterjee, Bikramjit...
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1251-1257 , 2022
Link: https://doi.org/10.1109/..
 
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12

Defect Engineering at the Al2O3/(010)β-Ga2O3Interface via S..:

Islam, Ahmad Ehteshamul ; Zhang, Chenyu ; DeLello, Kursti...
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5656-5663 , 2022
Link: https://doi.org/10.1109/..
 
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13

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and Hi..:

Dryden, Daniel M. ; Liddy, Kyle J. ; Islam, Ahmad E....
IEEE Electron Device Letters.  43 (2022)  8 - p. 1307-1310 , 2022
Link: https://doi.org/10.1109/..
 
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14

Device-level Transient Cooling of β-Ga2O3 MOSFETs:

, In: 2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm),
Kim, Samuel H. ; Spencer Lundh, James ; Shoemaker, Daniel... - p. 1-6 , 2022
Link: https://doi.org/10.1109/..
 
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15

Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band ..:

, In: 2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON),
Miller, Nicholas C. ; Moser, Neil A. ; Fitch, Robert C.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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