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Liliental-Weber, Z.
324  Ergebnisse:
Personensuche X
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1

Effects of structural defects on optical properties of InxG..:

Liliental-Weber, Z. ; dos Reis, Roberto
Journal of Applied Physics.  135 (2024)  9 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

The influence of the substrate misorientation on the struct..:

Liliental-Weber, Z. ; dos Reis, R. ; Sochacki, T..
Journal of Crystal Growth.  498 (2018)  - p. 346-351 , 2018
Link: https://doi.org/10.1016/..
 
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3

The importance of structural inhomogeneity in GaN thin film:

Liliental-Weber, Z. ; Reis, Roberto dos ; Weyher, Jan L...
Journal of Crystal Growth.  456 (2016)  - p. 160-167 , 2016
Link: https://doi.org/10.1016/..
 
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4

Structural defects in bulk GaN:

Liliental-Weber, Z. ; dos Reis, R. ; Mancuso, M....
Journal of Crystal Growth.  403 (2014)  - p. 66-71 , 2014
Link: https://doi.org/10.1016/..
 
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5

Local structure of amorphous GaN1−xAsx semiconductor alloys..:

Levander, A. X. ; Yu, K. M. ; Novikov, S. V....
Journal of Applied Physics.  113 (2013)  24 - p. , 2013
Link: https://doi.org/10.1063/..
 
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6

Direct atomic imaging of antiphase boundaries and orthotwin..:

dos Reis, R. ; Ophus, C. ; Jimenez, J....
Applied Physics Letters.  102 (2013)  8 - p. , 2013
Link: https://doi.org/10.1063/..
 
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7

Planar defects in thin films of InGaN:

Liliental-Weber, Z. ; Yu, K.M. ; Zakharov, D..
Microscopy and Microanalysis.  18 (2012)  S2 - p. 1486-1487 , 2012
Link: https://doi.org/10.1017/..
 
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8

Planar defects in patterned GaAs by aberration corrected ST..:

dos Reis, R. ; Liliental-Weber, Z. ; Ophus, C....
Microscopy and Microanalysis.  18 (2012)  S2 - p. 338-339 , 2012
Link: https://doi.org/10.1017/..
 
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9

Microstructure of GaN1−x Bi x:

Liliental-Weber, Z. ; Dos Reis, R. ; Levander, A.X....
Journal of Electronic Materials.  42 (2012)  1 - p. 26-32 , 2012
Link: https://doi.org/10.1007/..
 
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10

Thermal stability of amorphous GaN1−xAsx alloys:

Levander, A. X. ; Liliental-Weber, Z. ; Broesler, R....
Applied Physics Letters.  98 (2011)  16 - p. , 2011
Link: https://doi.org/10.1063/..
 
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11

Growth by molecular beam epitaxy of amorphous and crystalli..:

Novikov, S.V. ; Staddon, C.R. ; Foxon, C.T....
Journal of Crystal Growth.  323 (2011)  1 - p. 60-63 , 2011
Link: https://doi.org/10.1016/..
 
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12

Doping of GaN1−xAsx with high As content:

Levander, A. X. ; Novikov, S. V. ; Liliental-Weber, Z....
Journal of Applied Physics.  110 (2011)  9 - p. , 2011
Link: https://doi.org/10.1063/..
 
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13

Publisher's Note: "Quantum shift of band-edge stimulated em..:

Sun, C. J. ; Anwar, M. Zubair ; Chen, Q....
Applied Physics Letters.  98 (2011)  14 - p. , 2011
Link: https://doi.org/10.1063/..
 
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14

Decoupling single nanowire mobilities limited by surface sc..:

Khanal, D. R. ; Levander, A. X. ; Yu, K. M....
Journal of Applied Physics.  110 (2011)  3 - p. , 2011
Link: https://doi.org/10.1063/..
 
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15

Extended defects in bulk GaN and III-nitrides grown on this..:

Liliental-Weber, Z.
Journal of Crystal Growth.  312 (2010)  18 - p. 2599-2606 , 2010
Link: https://doi.org/10.1016/..
 
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