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Lindquist, Miles
33  Ergebnisse:
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1

Isothermal Characterization of Traps in GaN HEMTs Operating..:

Lindquist, Miles ; Roblin, Patrick ; Mikrut, Dominic..
IEEE Transactions on Microwave Theory and Techniques.  , 2024
Link: https://doi.org/10.1109/..
 
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2

Experimental Validation of ASM-HEMT Nonlinear Embedding Mod..:

, In: 2023 100th ARFTG Microwave Measurement Conference (ARFTG),
Lindquist, Miles ; Roblin, Patrick ; Miller, Nicholas C.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

New Real-Time Pulsed-RF NVNA Testbed for Isothermal Charact..:

, In: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
Lindquist, Miles ; Roblin, Patrick ; Miller, Nicholas C. - p. 1026-1029 , 2023
Link: https://doi.org/10.1109/..
 
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4

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN ..:

Miller, Nicholas C. ; Grupen, Matt ; Islam, Ahmad E....
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 435-442 , 2023
Link: https://doi.org/10.1109/..
 
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5

A Comparison Study on the Broadband Performance of Load-Mod..:

, In: 2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications,
Mikrut, Dominic ; Roblin, Patrick ; Lindquist, Miles.. - p. 32-35 , 2023
Link: https://doi.org/10.1109/..
 
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6

Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band ..:

, In: 2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON),
Miller, Nicholas C. ; Moser, Neil A. ; Fitch, Robert C.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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7

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band:

Moser, Neil A. ; Asel, Tadj ; Liddy, Kyle J....
IEEE Electron Device Letters.  41 (2020)  7 - p. 989-992 , 2020
Link: https://doi.org/10.1109/..
 
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8

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band:

Green, Andrew J. ; Moser, Neil ; Miller, Nicholas C....
IEEE Electron Device Letters.  41 (2020)  8 - p. 1181-1184 , 2020
Link: https://doi.org/10.1109/..
 
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9

Complementary growth of 2D transition metal dichalcogenide ..:

Wickramasinghe, Thushan E. ; Jensen, Gregory ; Thorat, Ruhi...
Applied Physics Letters.  117 (2020)  21 - p. , 2020
Link: https://doi.org/10.1063/..
 
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10

As-grown two-dimensional MoS2 based photodetectors with nat..:

Khadka, Sudiksha ; Wickramasinghe, Thushan E. ; Lindquist, Miles...
Applied Physics Letters.  110 (2017)  26 - p. , 2017
Link: https://doi.org/10.1063/..
 
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11

Monolayers: Concurrent Growth and Formation of Electrically..:

Khadka, Sudiksha ; Lindquist, Miles ; Aleithan, Shrouq H....
Advanced Materials Interfaces.  4 (2017)  4 - p. , 2017
Link: https://doi.org/10.1002/..
 
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12

Concurrent Growth and Formation of Electrically Contacted M..:

Khadka, Sudiksha ; Lindquist, Miles ; Aleithan, Shrouq H....
Advanced Materials Interfaces.  4 (2016)  4 - p. , 2016
Link: https://doi.org/10.1002/..
 
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13

Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs:

, In: 2019 Device Research Conference (DRC),
Liddy, Kyle J. ; Hendricks, Nolan S. ; Green, Andrew J.... - p. 219-220 , 2019
Link: https://doi.org/10.1109/..
 
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14

Thin channel β-Ga2O3 MOSFETs with self-aligned refractory m..:

Liddy, Kyle J. ; Green, Andrew J. ; Hendricks, Nolan S....
Applied Physics Express.  12 (2019)  12 - p. 126501 , 2019
Link: https://doi.org/10.7567/..
 
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15

Lateral β-Ga2O3 field effect transistors:

Chabak, Kelson D ; Leedy, Kevin D ; Green, Andrew J...
Semiconductor Science and Technology.  35 (2019)  1 - p. 013002 , 2019
Link: https://doi.org/10.1088/..
 
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