E-LIB Suche - Ergebnisse für: Linnarsson, Margareta

1

Influence of Carbon Cap on Self-Diffusion in Silicon Carbid:

Bathen, Marianne Etzelmüller ; Linnarsson, Margareta ; Ghezellou, Misagh..
Crystals. 10 (2020) 9 - p. 752 , 2020

Link: https://doi.org/10.3390/..

2

Improved interface and electrical properties of atomic laye..:

Suvanam, Sethu Saveda ; Usman, Muhammed ; Martin, David...
Applied Surface Science. 433 (2018) - p. 108-115 , 2018

Link: https://doi.org/10.1016/..

3

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal..:

Yakimova, Rositsa ; Ivanov, Ivan G. ; Vines, Lasse...
ECS Transactions. 80 (2017) 7 - p. 107-115 , 2017

Link: https://doi.org/10.1149/..

4

Ion implantation technology for silicon carbide:

Hallén, Anders ; Linnarsson, Margareta
Surface and Coatings Technology. 306 (2016) - p. 190-193 , 2016

Link: https://doi.org/10.1016/..

5

Cubic silicon carbide as a potential photovoltaic material:

Syväjärvi, Mikael ; Ma, Quanbao ; Jokubavicius, Valdas...
Solar Energy Materials and Solar Cells. 145 (2016) - p. 104-108 , 2016

Link: https://doi.org/10.1016/..

6

Ion-stimulated desorption in the medium-energy regime:

Kobayashi, Takane ; Primetzhofer, Daniel ; Linnarsson, Margareta.
Japanese Journal of Applied Physics. 53 (2014) 6 - p. 060305 , 2014

Link: https://doi.org/10.7567/..

7

Donor-acceptor-pair emission characterization in N-B doped ..:

Ou, Yiyu ; Jokubavicius, Valdas ; Kamiyama, Satoshi...
Optical Materials Express. 1 (2011) 8 - p. 1439 , 2011

Link: https://doi.org/10.1364/..

8

Development of gallium gradients in three-stage Cu(In,Ga)Se..:

Schleussner, Sebastian Michael ; Törndahl, Tobias ; Linnarsson, Margareta...
Progress in Photovoltaics: Research and Applications. 20 (2011) 3 - p. 284-293 , 2011

Link: https://doi.org/10.1002/..

9

Compensation in boron-doped CVD diamond:

Gabrysch, Markus ; Majdi, Saman ; Hallén, Anders...
physica status solidi (a). 205 (2008) 9 - p. 2190-2194 , 2008

Link: https://doi.org/10.1002/..

10

Sn-Background-Induced Diffusion Enhancement of Sb in Si:

Fage-Pedersen, Jacob ; Larsen, Arne Nylandsted ; Gaiduk, Peter..
Physical Review Letters. 81 (1998) 26 - p. 5856-5859 , 1998

Link: https://doi.org/10.1103/..

11

Hydrogen incorporation in epitaxial layers of 4H- and 6H-si..:

Schöner, Adolf ; Rottner, Kurt ; Nordell, Nils...
Diamond and Related Materials. 6 (1997) 10 - p. 1293-1296 , 1997

Link: https://doi.org/10.1016/..

12

Al Implantation in Sic; Where Will the Ions Come to Rest?:

Linnarsson, Margareta K. ; Vines, Lasse ; Hallén, Anders
Solid State Phenomena. 343 (2023) - p. 57-64 , 2023

Link: https://doi.org/10.4028/..

13

Intentional and Unintentional Channeling during Implantatio..:

Linnarsson, Margareta K. ; Hallén, Anders ; Vines, Lasse
Materials Science Forum. 1004 (2020) - p. 689-697 , 2020

Link: https://doi.org/10.4028/..

14

A versatile time-of-flight medium-energy ion scattering set..:

Sortica, Mauricio A. ; Linnarsson, Margareta K. ; Wessman, Dan..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 463 (2020) - p. 16-20 , 2020

Link: https://doi.org/10.1016/..

15

Channeled Implantations of p-Type Dopants into 4H-SiC at Di..:

Linnarsson, Margareta K. ; Hallén, Anders ; Vines, Lasse.
Materials Science Forum. 963 (2019) - p. 382-385 , 2019

Link: https://doi.org/10.4028/..