E-LIB Suche - Ergebnisse für: Lothian, J.R. ( author )

1

Thermal simulations of high power, bulk GaN rectifiers:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; Mehandru, R. ( author ) ; Kim, S. ( author )...
Solid State Electronics. , 2003

Link: https://doi.org/10.1016/..

2

Implanted p– n junctions in GaN:

Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Cao, X.A ( author ) ; LaRoche, J.R ( author )...
Solid State Electronics. , 1999

Link: https://doi.org/10.1016/..

3

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs..:

Department of Chemical Engineering, University of Florida, Gainsville, FL 32611, USA ( host institution ) ; Ren, F ( author ) ; Kopf, R.F ( author )...
Solid State Electronics. , 1998

Link: https://doi.org/10.1016/..

4

Recessed gate GaN field effect transistor:

Lucent Technologies Bell Laboratories Murray Hill New Jersey 07974 U.S.A. ( host institution ) ; Ren, F. ( author ) ; Lothian, J.R. ( author )...
Solid State Electronics. , 1997

Link: https://doi.org/10.1016/..

5

Plasma damage effects in InAlN field effect transistors:

Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA ( host institution ) ; Ren, F. ( author ) ; Lothian, J.R. ( author )...
Solid State Electronics. , 1996

Link: https://doi.org/10.1016/..

6

Passivation of carbon doping in InGaAs during ECR-CVD of Si..:

AT & T Bell Laboratories 600 Mountain Avenue Murray Hill NJ 07974 U.S.A. ( host institution ) ; Ren, F ( author ) ; Hamm, R.A ( author )...
Solid State Electronics. , 1996

Link: https://doi.org/10.1016/..

7

Electron cyclotron resonance plasma etching of InP and rela..:

AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A. ( host institution ) ; Ren, F ( author ) ; Hobson, W.S ( author )...
Solid State Electronics. , 1996

Link: https://doi.org/10.1016/..

8

The role of hydrogen in current-induced degradation of carb..:

AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A. ( host institution ) ; Ren, F ( author ) ; Abernathy, C.R ( author )...
Solid State Electronics. , 1995

Link: https://doi.org/10.1016/..

9

Degradation of GaAs/AlGaAs heterojunction bipolar transisto..:

Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA ( host institution ) ; Frei, M.R ( author ) ; Chiu, T.-Y ( author )...
Solid State Electronics. , 2002

Link: https://doi.org/10.1016/..

10

P54 Treatment adherence among people who inject drugs takin..:

Chronister, K.J. ; Gilliver, R. ; Kearley, J....
Journal of Virus Eradication. 3 (2017) - p. 30 , 2017

Link: https://doi.org/10.1016/..

11

O10 Treatment of Aboriginal and Torres Strait Islander clie..:

Gilliver, R. ; Machin, W. ; Kearley, J....
Journal of Virus Eradication. 3 (2017) - p. 4 , 2017

Link: https://doi.org/10.1016/..

12

P55 Client acceptability and feasibility of expanded access..:

Chronister, K.J. ; Lothian, R. ; Kearley, J...
Journal of Virus Eradication. 3 (2017) - p. 31 , 2017

Link: https://doi.org/10.1016/..

13

Spectral phase encoded time spread optical code division mu..:

Yoo, S. J. ; Heritage, J. P. ; Hernandez, V. J....
Journal of Optical Networking. 6 (2007) 10 - p. 1210 , 2007

Link: https://doi.org/10.1364/..

14

Editorial:

Lothian, J.R
Journal of International Money and Finance. 21 (2002) 6 - p. 693 , 2002

Link: https://doi.org/10.1016/..

15

Book reviews:

Seidl, C. ; Archibugi, D. ; Shubik, M....
Journal of Economics. 73 (2001) 2 - p. 202-225 , 2001

Link: https://doi.org/10.1007/..