E-LIB Suche - Ergebnisse für: Lou, Zaiqi

1

Estimating of IGBT Bond Wire Lift-Off Trend Using Convoluti..:

Mamee, Thatree ; Lou, Zaiqi ; Hata, Katsuhiro...
IEEE Access. 12 (2024) - p. 96936-96945 , 2024

Link: https://doi.org/10.1109/..

2

Mechanism of gate voltage spike under digital gate control ..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 7 (2024) - p. 100054 , 2024

Link: https://doi.org/10.1016/..

3

The design considerations of stray inductance for power mod..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 6 (2023) - p. 100047 , 2023

Link: https://doi.org/10.1016/..

4

IGBT Power Module Design for Suppressing Gate Voltage Spike..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
IEEE Access. 11 (2023) - p. 6632-6640 , 2023

Link: https://doi.org/10.1109/..

5

Enhancement of turn-off gate voltage waveform change by dig..:

Mamee, Thatree ; Lou, Zaiqi ; Hata, Katsuhiro...
Microelectronics Reliability. 147 (2023) - p. 115067 , 2023

Link: https://doi.org/10.1016/..

6

Bond wire lift-off detection by gate voltage waveform in IG..:

Mamee, Thatree ; Lou, Zaiqi ; Hata, Katsuhiro...
Power Electronic Devices and Components. 6 (2023) - p. 100052 , 2023

Link: https://doi.org/10.1016/..

7

Application of N parallel-connected SiC MOSFETs to solid-st..:

Lou, Zaiqi ; Saito, Wataru ; Nishizawa, Shin-ichi
Microelectronics Reliability. 138 (2022) - p. 114737 , 2022

Link: https://doi.org/10.1016/..

8

Cutoff Current Capability of SiC-MOSFETs with Parallel Conn..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),

Saito, Wataru ; Lou, Zaiqi ; Nishizawa, Shin-ichi - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

9

Unclamped Inductive Switching Robustness of SiC Devices Wit..:

Saito, Wataru ; Lou, Zaiqi ; NIshizawa, Shin-Ichi
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5671-5677 , 2022

Link: https://doi.org/10.1109/..

10

Investigation of acceptable breakdown voltage variation for..:

Lou, Zaiqi ; Saito, Wataru ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBD18 , 2021

Link: https://doi.org/10.35848..

11

Investigations on acceptable breakdown voltage variation of..:

Lou, Zaiqi ; Wada, Keiji ; Saito, Wataru.
Microelectronics Reliability. 126 (2021) - p. 114270 , 2021

Link: https://doi.org/10.1016/..

12

Mechanism of gate voltage spike under digital gate control ..:

Zaiqi Lou ; Thatree Mamee ; Katsuhiro Hata...
http://www.sciencedirect.com/science/article/pii/S2772370423000226. , 2024

Link: https://doi.org/10.1016/..

13

The design considerations of stray inductance for power mod..:

Zaiqi Lou ; Thatree Mamee ; Katsuhiro Hata...
http://www.sciencedirect.com/science/article/pii/S2772370423000159. , 2023

Link: https://doi.org/10.1016/..

14

Bond wire lift-off detection by gate voltage waveform in IG..:

Thatree Mamee ; Zaiqi Lou ; Katsuhiro Hata...
http://www.sciencedirect.com/science/article/pii/S2772370423000202. , 2023

Link: https://doi.org/10.1016/..

15

IGBT Power Module Design for Suppressing Gate Voltage Spike..:

Zaiqi Lou ; Thatree Mamee ; Katsuhiro Hata...
https://ieeexplore.ieee.org/document/10018193/. , 2023

Link: https://doi.org/10.1109/..