E-LIB Suche - Ergebnisse für: Lubyshev, D

1

Investigation of bulk and surface minority carrier lifetime..:

Taghipour, Z. ; Liu, A. W. K. ; Fastenau, J. M....
Journal of Applied Physics. 129 (2021) 1 - p. , 2021

Link: https://doi.org/10.1063/..

2

Photoluminescence spectroscopy of metamorphic InAsSb on GaA..:

Taghipour, Z. ; Rogers, V. ; Ringel, B....
Journal of Luminescence. 228 (2020) - p. 117581 , 2020

Link: https://doi.org/10.1016/..

3

InP-based quantum cascade lasers monolithically integrated ..:

Go, Rowel ; Krysiak, H. ; Fetters, M....
Optics Express. 26 (2018) 17 - p. 22389 , 2018

Link: https://doi.org/10.1364/..

4

Room temperature operation of quantum cascade lasers monoli..:

Go, R. ; Krysiak, H. ; Fetters, M....
Applied Physics Letters. 112 (2018) 3 - p. , 2018

Link: https://doi.org/10.1063/..

5

Band offset determination of mixed As/Sb type-II staggered ..:

Zhu, Y. ; Jain, N. ; Mohata, D. K....
Journal of Applied Physics. 113 (2013) 2 - p. , 2013

Link: https://doi.org/10.1063/..

6

Structural properties and band offset determination of p-ch..:

Zhu, Y. ; Jain, N. ; Mohata, D. K....
Applied Physics Letters. 101 (2012) 11 - p. , 2012

Link: https://doi.org/10.1063/..

7

Defect assistant band alignment transition from staggered t..:

Zhu, Y. ; Jain, N. ; Vijayaraghavan, S....
Journal of Applied Physics. 112 (2012) 9 - p. , 2012

Link: https://doi.org/10.1063/..

8

Interband cascade infrared photodetectors with enhanced ele..:

Tian, Z. ; Hinkey, R. T. ; Yang, Rui Q....
Journal of Applied Physics. 111 (2012) 2 - p. , 2012

Link: https://doi.org/10.1063/..

9

Role of InAs and GaAs terminated heterointerfaces at source..:

Zhu, Y. ; Jain, N. ; Vijayaraghavan, S....
Journal of Applied Physics. 112 (2012) 2 - p. , 2012

Link: https://doi.org/10.1063/..

10

Combined cross sectional scanning tunneling microscopy and ..:

Yakes, M. K. ; Qadri, S. B. ; Mahadik, N. A....
Applied Physics Letters. 101 (2012) 24 - p. , 2012

Link: https://doi.org/10.1063/..

11

Significantly improved minority carrier lifetime observed i..:

Steenbergen, E. H. ; Connelly, B. C. ; Metcalfe, G. D....
Applied Physics Letters. 99 (2011) 25 - p. , 2011

Link: https://doi.org/10.1063/..

12

Monolithic integration of InP-based transistors on Si subst..:

Liu, W.K. ; Lubyshev, D. ; Fastenau, J.M....
Journal of Crystal Growth. 311 (2009) 7 - p. 1979-1983 , 2009

Link: https://doi.org/10.1016/..

13

Engineering Substrates for 3D Integration of III-V and CMOS:

Herrick, Katherine J. ; Kazior, T. E. ; LaRoche, J. R....
ECS Transactions. 16 (2008) 8 - p. 227-234 , 2008

Link: https://doi.org/10.1149/..

14

Monolithic III-V/Si Integration:

Fitzgerald, Eugene A. ; Bulsara, M. T. ; Bai, Y....
ECS Transactions. 16 (2008) 10 - p. 1015-1020 , 2008

Link: https://doi.org/10.1149/..

15

Wideband DHBTs using a graded carbon-doped InGaAs base:

Dahlstrom, M. ; Fang, X.-M. ; Lubyshev, D....
IEEE Electron Device Letters. 24 (2003) 7 - p. 433-435 , 2003

Link: https://doi.org/10.1109/..