E-LIB Suche - Ergebnisse für: Lundh, James Spencer

1

2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Swi..:

, In: 2024 Device Research Conference (DRC),

Sadek, Mansura ; Kemmerling, Jesse T. ; Visvkarma, Ajay Kumar... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

2

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 He..:

Wan, Hsiao-Hsuan ; Li, Jian-Sian ; Chiang, Chao-Ching...
ECS Transactions. 113 (2024) 7 - p. 3-14 , 2024

Link: https://doi.org/10.1149/..

3

Nanocrystalline Diamond Lateral Overgrowth for High Thermal..:

Francis, Daniel ; Ji, Xiaoyang ; Vanjari, Sai Charan...
ECS Transactions. 113 (2024) 7 - p. 15-22 , 2024

Link: https://doi.org/10.1149/..

4

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 ..:

Lundh, James Spencer ; Pavlidis, Georges ; Sasaki, Kohei...
Applied Physics Letters. 124 (2024) 5 - p. , 2024

Link: https://doi.org/10.1063/..

5

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heteroju..:

Masten, Hannah N. ; Lundh, James Spencer ; Feygelson, Tatyana I....
Applied Physics Letters. 124 (2024) 15 - p. , 2024

Link: https://doi.org/10.1063/..

6

Experimental Validation of Robust Hybrid Edge Termination S..:

Lundh, James Spencer ; Jacobs, Alan G. ; Pandey, Prakash...
IEEE Electron Device Letters. 45 (2024) 5 - p. 873-876 , 2024

Link: https://doi.org/10.1109/..

7

Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction L..:

Wan, Hsiao-Hsuan ; Li, Jian-Sian ; Chiang, Chao-Ching...
ECS Journal of Solid State Science and Technology. 12 (2023) 7 - p. 075008 , 2023

Link: https://doi.org/10.1149/..

8

(Invited) NiO/ β-(Alx Ga1-x )2O3 /Ga2O3 Heterojunction Late..:

Wan, Hsiao-Hsuan ; Li, Jian-Sian ; Chiang, Chao-Ching...
ECS Transactions. 111 (2023) 2 - p. 85-96 , 2023

Link: https://doi.org/10.1149/..

9

Experimental determination of critical thickness limitation..:

Lundh, James Spencer ; Huynh, Kenny ; Liao, Michael...
Applied Physics Letters. 123 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..

10

Electrothermal Performance of AlGaN/GaN Lateral Transistors..:

Lundh, James Spencer ; Waltereit, Patrick ; Müller, Stefan...
physica status solidi (a). , 2023

Link: https://doi.org/10.1002/..

11

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal ..:

Tadjer, Marko J. ; Waltereit, Patrick ; Kirste, Lutz...
physica status solidi (a). , 2023

Link: https://doi.org/10.1002/..

12

Thermal management and packaging of wide and ultra-wide ban..:

Qin, Yuan ; Albano, Benjamin ; Spencer, Joseph...
Journal of Physics D: Applied Physics. 56 (2023) 9 - p. 093001 , 2023

Link: https://doi.org/10.1088/..

13

Towards Controlled Transfer of (001) β-Ga2O3 to (0001) 4H-S..:

Liao, Michael Evan ; Huynh, Kenny ; Carson, Brandon...
ECS Transactions. 112 (2023) 3 - p. 269-278 , 2023

Link: https://doi.org/10.1149/..

14

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effe..:

, In: 2022 Device Research Conference (DRC),

Lundh, James Spencer ; Masten, Hannah N. ; Sasaki, Kohei... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

15

Growth-microstructure-thermal property relations in AlN thi..:

Song, Yiwen ; Zhang, Chi ; Lundh, James Spencer...
Journal of Applied Physics. 132 (2022) 17 - p. , 2022

Link: https://doi.org/10.1063/..