Lundstrom, Mark
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A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drai..:

Zhang, Zhuocheng ; Lin, Zehao ; Liao, Pai-Ying...
IEEE Electron Device Letters.  43 (2022)  11 - p. 1905-1908 , 2022
 
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