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Luo, Runding
5  Ergebnisse:
Personensuche X
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1

Optimal Design of 100–2000 V 4H–SiC Power MOSFETs Using Mul..:

Luo, Runding ; Sun, Botao ; Hou, Xinlan...
IEEE Electron Device Letters.  45 (2024)  5 - p. 786-788 , 2024
Link: https://doi.org/10.1109/..
 
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2

Molecular dynamics simulations on mechanical behaviors of s..:

Luo, Runding ; Hu, Dong ; Qian, Cheng...
Microelectronics Reliability.  152 (2024)  - p. 115284 , 2024
Link: https://doi.org/10.1016/..
 
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3

Process-based IGBT Modeling with TCAD for Static and Dynami..:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
Chang, Yifei ; Qi, Lina ; Luo, Runding. - p. 1-6 , 2024
Link: https://doi.org/10.1109/..
 
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4

The Degradation and Recovery of 1200-V SiC MOSFET with Diff..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Zhang, Yuan-Lan ; Duan, Yu-Han ; Luo, Run-Ding... - p. 100-103 , 2023
Link: https://doi.org/10.1109/..
 
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5

Total Ionizing Effects on Static Characteristics of 1200V S..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Luo, Runding ; Duan, Yuhan ; Sun, Botao... - p. 88-91 , 2023
Link: https://doi.org/10.1109/..
 
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