E-LIB Suche - Ergebnisse für: Müssig, H.-J.

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Ökonomische Funktion des Prüfungsausschusses im deutschen..:

, In: Betriebswirtschaftliche Forschung und Praxis

Böcking, Hans-Joachim ; Müßig, Anke. (2004) 5 - p. 417-440

Exemplare: Zentrale; TB Sozialw.;

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Physica status solidi

Volume 69, Number 1: January 16 Physica status solidi ; Volume 69, Number 1, A

Aarna, H. A ; Abdelmohsen, N ; Abdullaeva, S. G... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 55, Number 2: October 16 Physica status solidi ; Volume 55, Number 2, A

Amelinckx, S ; Antonopoulos, J. G ; Appel, F... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Dielectric properties of single crystalline PrO2(111)/Si(11..:

Seifarth, O. ; Walczyk, Ch. ; Lupina, G....
Journal of Applied Physics. 106 (2009) 10 - p. , 2009

Link: https://doi.org/10.1063/..

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Hf- and Zr-based alkaline earth perovskite dielectrics for ..:

Łupina, G. ; Seifarth, O. ; Kozłowski, G....
Microelectronic Engineering. 86 (2009) 7-9 - p. 1842-1844 , 2009

Link: https://doi.org/10.1016/..

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Pulse-induced low-power resistive switching in HfO2 metal-i..:

Walczyk, Ch. ; Wenger, Ch. ; Sohal, R....
Journal of Applied Physics. 105 (2009) 11 - p. , 2009

Link: https://doi.org/10.1063/..

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The role of the HfO2–TiN interface in capacitance–voltage n..:

Wenger, Ch. ; Lukosius, M. ; Weidner, G....
Thin Solid Films. 517 (2009) 23 - p. 6334-6336 , 2009

Link: https://doi.org/10.1016/..

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Dielectric constant and leakage of BaZrO3 films:

Łupina, G. ; Dąbrowski, J. ; Dudek, P....
Applied Physics Letters. 94 (2009) 15 - p. , 2009

Link: https://doi.org/10.1063/..

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Atomically smooth and single crystalline Ge(111)/cubic-Pr2O..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics. 105 (2009) 3 - p. , 2009

Link: https://doi.org/10.1063/..

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Publisher's Note: "Atomically smooth and single crystalline..:

Giussani, A. ; Rodenbach, P. ; Zaumseil, P....
Journal of Applied Physics. 105 (2009) 12 - p. 129905 , 2009

Link: https://doi.org/10.1063/..

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Thin BaHfO3 high-k dielectric layers on TiN for memory capa..:

Lupina, G. ; Kozłowski, G. ; Dabrowski, J....
Applied Physics Letters. 92 (2008) 6 - p. , 2008

Link: https://doi.org/10.1063/..

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Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate..:

Wenger, Ch. ; Lukosius, M. ; Costina, I....
Microelectronic Engineering. 85 (2008) 8 - p. 1762-1765 , 2008

Link: https://doi.org/10.1016/..

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The influence of lattice oxygen on the initial growth behav..:

Giussani, A. ; Seifarth, O. ; Rodenbach, P....
Journal of Applied Physics. 103 (2008) 8 - p. , 2008

Link: https://doi.org/10.1063/..

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Lattice engineering of dielectric heterostructures on Si by..:

Schroeder, T. ; Costina, I. ; Storck, P....
Journal of Applied Physics. 103 (2008) 8 - p. , 2008

Link: https://doi.org/10.1063/..

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Dielectric and structural properties of thin SrHfO3 layers ..:

Lupina, G. ; Kozłowski, G. ; Dabrowski, J....
Applied Physics Letters. 93 (2008) 25 - p. , 2008

Link: https://doi.org/10.1063/..