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X
Maitrejean, S.
55  Ergebnisse:
Personensuche X
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1

3D sequential integration with Si CMOS stacked on 28nm indu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Mota-Frutuoso, T. ; Lapras, V. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

3D sequential integration: applications and associated key ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Batude, P. ; Billoint, O. ; Thuries, S.... - p. 3.2.1-3.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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3

Converting SOI to sSOI through Amorphization and Crystalliz..:

Maitrejean, S. ; Loubet, N. ; Augendre, E....
ECS Journal of Solid State Science and Technology.  4 (2015)  9 - p. P376-P381 , 2015
Link: https://doi.org/10.1149/..
 
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4

The effect of Ta interface on the crystallization of amorph..:

Ghezzi, G. E. ; Noé, P. ; Marra, M....
Applied Physics Letters.  104 (2014)  22 - p. , 2014
Link: https://doi.org/10.1063/..
 
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5

A study of nitrogen behavior in the formation of Ta/TaN and..:

Gassilloud, R. ; Maunoury, C. ; Leroux, C....
Applied Physics Letters.  104 (2014)  14 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

Material engineering of GexTe100−x compounds to improve pha..:

Navarro, G. ; Sousa, V. ; Persico, A....
Solid-State Electronics.  89 (2013)  - p. 93-100 , 2013
Link: https://doi.org/10.1016/..
 
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7

Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Prope..:

Gourvest, E. ; Pelissier, B. ; Vallée, C....
Journal of The Electrochemical Society.  159 (2012)  4 - p. H373-H377 , 2012
Link: https://doi.org/10.1149/..
 
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8

Lowering the Reset Current and Power Consumption of Phase-C..:

, In: 2012 4th IEEE International Memory Workshop,
Hubert, Q. ; Jahan, C. ; Toffoli, A.... - p. 1-4 , 2012
Link: https://doi.org/10.1109/..
 
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9

Crystallization of Ge2Sb2Te5 nanometric phase change materi..:

Ghezzi, G. E. ; Morel, R. ; Brenac, A....
Applied Physics Letters.  101 (2012)  23 - p. , 2012
Link: https://doi.org/10.1063/..
 
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10

Carbon-doped Ge2Sb2Te5 phase-change memory devices featurin..:

, In: 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC),
Hubert, Q. ; Jahan, C. ; Toffoli, A.... - p. 286-289 , 2012
Link: https://doi.org/10.1109/..
 
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11

Effect of carbon doping on the structure of amorphous GeTe ..:

Ghezzi, G. E. ; Raty, J. Y. ; Maitrejean, S....
Applied Physics Letters.  99 (2011)  15 - p. , 2011
Link: https://doi.org/10.1063/..
 
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12

Carbon-doped GeTe: A promising material for Phase-Change Me..:

Betti Beneventi, G. ; Perniola, L. ; Sousa, V....
Solid-State Electronics.  65-66 (2011)  - p. 197-204 , 2011
Link: https://doi.org/10.1016/..
 
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13

Evidence of Heterogeneous Strain during Crystallization of ..:

Fillot, F. ; Loubriat, S. ; Gergaud, P..
Electrochemical and Solid-State Letters.  14 (2011)  7 - p. H285-H287 , 2011
Link: https://doi.org/10.1149/..
 
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14

Crystallization study of "melt quenched" amorphous GeTe by ..:

Bastard, A. ; Bastien, J. C. ; Hyot, B....
Applied Physics Letters.  99 (2011)  24 - p. 243103 , 2011
Link: https://doi.org/10.1063/..
 
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15

Analysis by simulation of amorphization current in phase ch..:

Cueto, O. ; Jahan, C. ; Sousa, V....
Microelectronic Engineering.  88 (2011)  5 - p. 827-832 , 2011
Link: https://doi.org/10.1016/..
 
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