E-LIB Suche - Ergebnisse für: Majerfeld, A.

1

Temperature dependence of excitonic properties of (111)B In..:

Cho, Soohaeng ; Majerfeld, A.
Journal of Applied Physics. 106 (2009) 2 - p. , 2009

Link: https://doi.org/10.1063/..

2

Interfacial properties of strained piezoelectric InGaAs∕GaA..:

Cho, Soohaeng ; Sanz-Hervás, A. ; Kim, Jongseok..
Journal of Applied Physics. 96 (2004) 4 - p. 1909-1913 , 2004

Link: https://doi.org/10.1063/..

3

Structural properties of strained piezoelectric [111]A-orie..:

Kim, Jongseok ; Cho, Soohaeng ; Sanz-Hervás, A....
Journal of Crystal Growth. 248 (2003) - p. 359-363 , 2003

Link: https://doi.org/10.1016/..

4

Observation of the pyroelectric effect in strained piezoele..:

Cho, S. ; Majerfeld, A. ; Sánchez, J.J....
Microelectronics Journal. 33 (2002) 7 - p. 531-534 , 2002

Link: https://doi.org/10.1016/..

5

Confirmation of the pyroelectric coefficient of strained In..:

Sánchez, J. J. ; Izpura, J. I. ; Tijero, J. M. G....
Journal of Applied Physics. 91 (2002) 5 - p. 3002-3006 , 2002

Link: https://doi.org/10.1063/..

6

Determination of the pyroelectric coefficient in strained I..:

Cho, Soohaeng ; Majerfeld, A. ; Sanz-Hervás, A....
Journal of Applied Physics. 90 (2001) 2 - p. 915-917 , 2001

Link: https://doi.org/10.1063/..

7

MOVPE growth of highly-strained piezoelectric InGaAs/GaAs q..:

Kim, Jongseok ; Cho, Soohaeng ; Sanz-Hervás, A...
Journal of Crystal Growth. 225 (2001) 2-4 - p. 415-419 , 2001

Link: https://doi.org/10.1016/..

8

MOVPE growth and properties of P-I-N InGaAs/GaAs strained m..:

Kim, Jongseok ; Cho, Soohaeng ; Sanz-Hervás, Alfredo..
Journal of Crystal Growth. 221 (2000) 1-4 - p. 525-529 , 2000

Link: https://doi.org/10.1016/..

9

Interfacial properties of (111)A GaAs/AlGaAs multiquantum-w..:

Sanz-Hervás, A. ; Cho, Soohaeng ; Majerfeld, A..
Applied Physics Letters. 76 (2000) 21 - p. 3073-3075 , 2000

Link: https://doi.org/10.1063/..

10

Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple q..:

Cho, Soohaeng ; Sanz-Hervás, A. ; Kovalenkov, O.V....
Materials Science and Engineering: B. 66 (1999) 1-3 - p. 123-125 , 1999

Link: https://doi.org/10.1016/..

11

Metalorganic vapor phase epitaxy growth and properties of G..:

Cho, Soohaeng ; Sanz-Hervás, A. ; Kim, Jongseok...
Microelectronics Journal. 30 (1999) 4-5 - p. 455-459 , 1999

Link: https://doi.org/10.1016/..

12

Effect of the growth parameters on the luminescence propert..:

Sanz-Hervás, A. ; Cho, Soohaeng ; Kim, Jongseok...
Journal of Crystal Growth. 195 (1998) 1-4 - p. 558-563 , 1998

Link: https://doi.org/10.1016/..

13

Direct determination of the piezoelectric field in (111) st..:

Dickey, S.A. ; Majerfeld, A. ; Sánchez-Rojas, J.L....
Microelectronic Engineering. 43-44 (1998) - p. 171-177 , 1998

Link: https://doi.org/10.1016/..

14

Valence-band structure and optical absorption inp-type GaAs..:

Melliti, R. ; Tronc, P. ; Mao, E...
Superlattices and Microstructures. 23 (1998) 5 - p. 1037-1046 , 1998

Link: https://doi.org/10.1006/..

15

High quality GaAs/AlGaAs quantum wells grown on (111)A subs..:

Mayo, E. ; Dickey, S.A. ; Majerfeld, A...
Microelectronics Journal. 28 (1997) 8-10 - p. 727-734 , 1997

Link: https://doi.org/10.1016/..