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Makhkamov, Sh.
31  Ergebnisse:
Personensuche X
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1

Efficiency of Injecting Radiation Defects during Irradiatio..:

Tashmetov, M. Yu. ; Makhkamov, Sh. ; Sattiev, A. R...
Applied Solar Energy.  57 (2021)  3 - p. 188-191 , 2021
Link: https://doi.org/10.3103/..
 
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2

Quantum-Chemical Calculations of Pure and Phosphorous Doped..:

, In: Advanced Nanomaterials for Detection of CBRN; NATO Science for Peace and Security Series A: Chemistry and Biology,
Makhkamov, Sh. ; Umarova, F. ; Normurodov, A.... - p. 111-121 , 2020
Link: https://doi.org/10.1007/..
 
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3

Formation of radiation defects in zinc-doped silicon solar ..:

Makhkamov, Sh. ; Muminov, R. A. ; Karimov, M....
Applied Solar Energy.  49 (2013)  4 - p. 185-191 , 2013
Link: https://doi.org/10.3103/..
 
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4

Influence of the conductivity type of silicon on the proces..:

Makhkamov, Sh. ; Muminov, R. A. ; Karimov, M....
Applied Solar Energy.  49 (2013)  2 - p. 62-66 , 2013
Link: https://doi.org/10.3103/..
 
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5

The effect of fast neutrons on the electrophysical properti..:

Karimov, M. ; Makhkamov, Sh. ; Tursunov, N. A...
Russian Physics Journal.  54 (2011)  5 - p. 589-593 , 2011
Link: https://doi.org/10.1007/..
 
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6

Peculiarities of influence of radiation defects on photocon..:

Karimov, M. ; Makhkamov, Sh. ; Makhmudov, Sh. A....
Applied Solar Energy.  46 (2010)  4 - p. 298-300 , 2010
Link: https://doi.org/10.3103/..
 
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7

Investigation of the electrophysical properties and structu..:

Makhkamov, Sh. ; Tursunov, N. A. ; Karimov, M....
Russian Physics Journal.  53 (2010)  5 - p. 499-503 , 2010
Link: https://doi.org/10.1007/..
 
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8

Relaxation kinetics of photoconductivity in р-silicon compe..:

Karimov, M. ; Makhkamov, Sh. ; Tursunov, N. A....
Russian Physics Journal.  52 (2009)  5 - p. 448-451 , 2009
Link: https://doi.org/10.1007/..
 
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9

Concentrated solar energy conversion to powerful laser radi..:

Fazilov, A. ; Riskiev, T. T. ; Abdurakhmanov, A. A....
Applied Solar Energy.  44 (2008)  2 - p. 93-96 , 2008
Link: https://doi.org/10.3103/..
 
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10

Two-stage doping of silicon with phosphorus-32 and sulfur-3..:

Makhkamov, Sh. ; Tursunov, N. A. ; Karimov, M....
Technical Physics Letters.  34 (2008)  7 - p. 574-576 , 2008
Link: https://doi.org/10.1134/..
 
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11

Interaction of deep impurities with radiation defects in n-..:

Makhkamov, Sh. ; Karimov, M. ; Khakimov, Z. M....
Radiation Effects and Defects in Solids.  160 (2005)  8 - p. 349-356 , 2005
Link: https://doi.org/10.1080/..
 
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12

On the thermostability of electrical properties of p-Si and..:

Makhkamov, Sh. ; Karimov, M. ; Kurbanov, A. O...
Russian Physics Journal.  48 (2005)  12 - p. 1298-1301 , 2005
Link: https://doi.org/10.1007/..
 
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13

Formation of radiation defects in silicon structures under ..:

Makhkamov, Sh ; Tursunov, N A ; Ashurov, M..
Semiconductor Science and Technology.  16 (2001)  7 - p. 543-547 , 2001
Link: https://doi.org/10.1088/..
 
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14

Characteristics of the formation of radiation defects in si..:

Makhkamov, Sh. ; Tursunov, N. A. ; Ashurov, M...
Technical Physics.  44 (1999)  1 - p. 110-112 , 1999
Link: https://doi.org/10.1134/..
 
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15

On the exact degree of complexity of a class of operator eq..:

Makhkamov, K. Sh.
Ukrainian Mathematical Journal.  46 (1994)  7 - p. 979-990 , 1994
Link: https://doi.org/10.1007/..
 
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