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Makiyama, Kozo
27  Ergebnisse:
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1

Electric Field Modulation in the Channel by Lateral Thickne..:

Miyamoto, Yasuyuki ; Makiyama, Kozo
IEEE Transactions on Electron Devices.  70 (2023)  5 - p. 2210-2215 , 2023
Link: https://doi.org/10.1109/..
 
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2

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrie..:

Kotani, Junji ; Makiyama, Kozo ; Ohki, Toshihiro...
Electronics Letters.  59 (2023)  4 - p. , 2023
Link: https://doi.org/10.1049/..
 
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3

Innovative RF Device Technologies for Advanced Information ..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Makiyama, Kozo ; Yoshida, Shigeki ; Nakata, Ken. - p. 17-20 , 2022
Link: https://doi.org/10.1109/..
 
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4

Challenges and Potential of N-polar GaN HEMT for beyond 5G ..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Yoshida, Shigeki ; Makiyama, Kozo ; Hayasaka, Akihiro.. - p. 104-107 , 2022
Link: https://doi.org/10.1109/..
 
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5

Surface activated bonding of SiC/diamond for thermal manage..:

Minoura, Yuichi ; Ohki, Toshihiro ; Okamoto, Naoya...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGD03 , 2020
Link: https://doi.org/10.7567/..
 
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6

Thermally stable and low trap density SiNx/AlON bi-layer st..:

Kamada, Yoichi ; Ozaki, Shiro ; Yaita, Junya...
Japanese Journal of Applied Physics.  59 (2020)  4 - p. 046505 , 2020
Link: https://doi.org/10.35848..
 
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7

Remarkable Current Collapse Suppression in GaN HEMTs on Fre..:

, In: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Kumazaki, Yusuke ; Watanabe, Keiji ; Ohki, Toshihiro... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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8

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bo..:

Ohki, Toshihiro ; Yamada, Atsushi ; Minoura, Yuichi...
IEEE Electron Device Letters.  40 (2019)  2 - p. 287-290 , 2019
Link: https://doi.org/10.1109/..
 
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9

Maximum frequency of oscillation of 1.3 THz obtained by usi..:

Takahashi, Tsuyoshi ; Kawano, Yoichi ; Makiyama, Kozo...
Applied Physics Express.  10 (2017)  2 - p. 024102 , 2017
Link: https://doi.org/10.7567/..
 
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10

Effects of air annealing on DC characteristics of InAlN/GaN..:

Ozaki, Shiro ; Makiyama, Kozo ; Ohki, Toshihiro...
Applied Physics Express.  10 (2017)  6 - p. 061001 , 2017
Link: https://doi.org/10.7567/..
 
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11

300-GHz Amplifier in 75-nm InP HEMT Technology:

MATSUMURA, Hiroshi ; KAWANO, Yoichi ; SHIBA, Shoichi...
IEICE Transactions on Electronics.  E99.C (2016)  5 - p. 528-534 , 2016
Link: https://doi.org/10.1587/..
 
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12

High-speed III-V devices for millimeter-wave receiver appli..:

, In: 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT),
Takahashi, Tsuyoshi ; Sato, Masaru ; Makiyama, Kozo... - p. 238-240 , 2015
Link: https://doi.org/10.1109/..
 
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13

Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vap..:

Ozaki, Shiro ; Makiyama, Kozo ; Ohki, Toshihiro...
physica status solidi (a).  213 (2015)  5 - p. 1259-1262 , 2015
Link: https://doi.org/10.1002/..
 
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14

Reduction in current collapse of AlGaN/GaN HEMTs using meth..:

Ozaki, Shiro ; Makiyama, Kozo ; Ohki, Toshihiro...
physica status solidi (a).  212 (2014)  5 - p. 1153-1157 , 2014
Link: https://doi.org/10.1002/..
 
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15

Millimeter-Wave GaN HEMT for Power Amplifier Applications:

JOSHIN, Kazukiyo ; MAKIYAMA, Kozo ; OZAKI, Shiro...
IEICE Transactions on Electronics.  E97.C (2014)  10 - p. 923-929 , 2014
Link: https://doi.org/10.1587/..
 
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