E-LIB Suche - Ergebnisse für: Malinauskas, T.

1

Influence of matrix composition and its fluctuations on exc..:

Nargelas, S. ; Talochka, Y. ; Vaitkevičius, A....
Journal of Luminescence. 242 (2022) - p. 118590 , 2022

Link: https://doi.org/10.1016/..

2

Stimulated emission threshold in thick GaN epilayers: inter..:

Nargelas, S. ; Mickevičius, J. ; Kadys, A...
Optics & Laser Technology. 134 (2021) - p. 106624 , 2021

Link: https://doi.org/10.1016/..

3

A comparative study on atomic layer deposited oxide film mo..:

Reklaitis, I. ; Radiunas, E. ; Malinauskas, T....
Surface and Coatings Technology. 399 (2020) - p. 126123 , 2020

Link: https://doi.org/10.1016/..

4

Development of polarity inversion in a GaN waveguide struct..:

Kolenda, M. ; Kezys, D. ; Reklaitis, I....
Journal of Materials Science. 55 (2020) 26 - p. 12008-12021 , 2020

Link: https://doi.org/10.1007/..

5

Study of the electrical characteristics of CdZnTe Schottky ..:

Gaubas, E. ; Ceponis, T. ; Deveikis, L....
Materials Science in Semiconductor Processing. 105 (2020) - p. 104705 , 2020

Link: https://doi.org/10.1016/..

6

Quasi-Phase-Matching Method Based on Coupling Compensation ..:

, In: 2019 21st International Conference on Transparent Optical Networks (ICTON),

Petruskevicius, R. ; Kezys, D. ; Malinauskas, T... - p. 1-3 , 2019

Link: https://doi.org/10.1109/..

7

Improvement of luminescence properties of InN by optimizati..:

Mickevičius, J. ; Dobrovolskas, D. ; Malinauskas, T....
Thin Solid Films. 680 (2019) - p. 89-93 , 2019

Link: https://doi.org/10.1016/..

8

Engineering of InN epilayers by repeated deposition of ultr..:

Mickevičius, J. ; Dobrovolskas, D. ; Steponavičius, T....
Applied Surface Science. 427 (2018) - p. 1027-1032 , 2018

Link: https://doi.org/10.1016/..

9

Time of carrier escape and recombination coefficients in In..:

Reklaitis, I ; Krencius, L ; Malinauskas, T...
Semiconductor Science and Technology. 34 (2018) 1 - p. 015007 , 2018

Link: https://doi.org/10.1088/..

10

Study of recombination characteristics in MOCVD grown GaN e..:

Gaubas, E ; Ceponis, T ; Dobrovolskas, D...
Semiconductor Science and Technology. 32 (2017) 12 - p. 125014 , 2017

Link: https://doi.org/10.1088/..

11

Differential carrier lifetime in InGaN-based light-emitting..:

Reklaitis, I. ; Nippert, F. ; Kudžma, R....
Journal of Applied Physics. 121 (2017) 3 - p. , 2017

Link: https://doi.org/10.1063/..

12

Influence of metalorganic precursors flow interruption timi..:

Dmukauskas, M ; Kadys, A ; Malinauskas, T...
Journal of Physics D: Applied Physics. 49 (2016) 50 - p. 505101 , 2016

Link: https://doi.org/10.1088/..

13

Molecular engineering of the hole-transporting material spi..:

Tomkute-Luksiene, D. ; Daskeviciene, M. ; Malinauskas, T....
RSC Advances. 6 (2016) 65 - p. 60587-60594 , 2016

Link: https://doi.org/10.1039/..

14

Light-induced reflectivity transients in black-Si nanoneedl..:

Ščajev, P. ; Malinauskas, T. ; Seniutinas, G....
Solar Energy Materials and Solar Cells. 144 (2016) - p. 221-227 , 2016

Link: https://doi.org/10.1016/..

15

Carrier dynamics in blue and green emitting InGaN MQWs:

Aleksiejūnas, R. ; Nomeika, K. ; Miasojedovas, S....
physica status solidi (b). 252 (2015) 5 - p. 977-982 , 2015

Link: https://doi.org/10.1002/..